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Realization with Fabrication of Dual-Gate MOSFET Based Source Follower

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Abstract

The research work designs a source follower (common drain amplifier) using dual-gate MOSFET. The theoretical background for the fundamental concepts involved in this work has been analyzed. The mathematical analysis of circuit design based on the basic concepts has been performed. Since the DG MOSFET provides twice the drain current flow compared to the traditional MOSFET, which improves various circuit parameters, increasing the device performance and efficiency of the source follower circuit. Two dual-gate MOSFET source follower models, using DC and AC analysis, have been proposed in the research work. It aims to improve the operational feasibility and stability of the source follower in Radio-Frequency (RF) applications.

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The authors have no relevant financial or non-financial interests to disclose.

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The authors declare that no funds, grants, or other support were received during the preparation of this manuscript.

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Authors and Affiliations

  1. Department of Electronic Engineering, Howard College, University of KwaZulu-Natal, Durban, 4041, South Africa

    Dylan Pillay & Viranjay M. Srivastava

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  1. Dylan Pillay
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  2. Viranjay M. Srivastava
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Contributions

Dylan Pillay (DP) and Viranjay M. Srivastava (VMS) conducted this research; DP has designed and analyzed the model with data and wrote this article; VMS has verified the result with the designed model; all authors had approved the final version.

Corresponding author

Correspondence to Viranjay M. Srivastava.

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Pillay, D., Srivastava, V.M. Realization with Fabrication of Dual-Gate MOSFET Based Source Follower. Silicon 14, 11979–11989 (2022). https://doi.org/10.1007/s12633-022-01922-1

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