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Preparation and Characteristics Study of High-Quantum Efficiency Ni/PSi/c-Si and cd/PSi/c-Si Double-Junction Photodetectors

Abstract

In this work, nanocrystalline porous silicon (PSi) was prepared by the photo-electrochemical etching (PECE) technique. A comparison study between the optoelectronic properties of double junctions Ni/PSi/c-Si and Cd/PSi/c-Si photodetectors is reported. The Ni and Cd thin films were deposited on the porous silicon layers by the thermal evaporation technique. The structural, electrical, and optoelectronic properties of Cd/PSi/n-Si and Ni/PSi/c-Si devices were examined at room temperature. The XRD analysis confirmed the formation of the nanocrystalline structure of the PSi layer. Scanning electron microscope (SEM) studies reveal the formation of circular pores with an average diameter of 250 nm. The dark and illuminated I-V characteristics of the photodetectors are investigated at room temperature, and the junction characteristics of the Cd/PSi/c-Si junction are better than those of the Ni/PSi/c-Si junction. The maximum responsivity of the Cd/PSi/c-Si photodetector is 1.47AW−1 at 400 nm, while the maximum responsivity of Ni/PSi/c-Si was about 1.45AW−1 at 540 nm. The external quantum efficiency (EQE) of Cd/PSi/c-Si and Ni/PSi/c-Si photodetectors was 450% and 330% at 400 nm, respectively.

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References

  1. Hadi HA, Ismail RA (2021) Energy Band Diagram of FTO/porous silicon Heterostructure. J Physics: Conf Series; Bristol 1795:1. https://doi.org/10.1088/1742-6596/1795/1/012016

    CAS  Article  Google Scholar 

  2. Hadi HA (2014) Comparative Study of Schottky Barrier Heights of the Different Metals Based on Porous Silicon Prepared by Photo-Electrochemical Etching (PECE). Mater Focus 3(6):438–443

    CAS  Article  Google Scholar 

  3. Hadi HA, Ismail RA, Habubi NF (2014) Optoelectronic properties of porous silicon heterojunction photodetector. Indian J Phys 88:59–63. https://doi.org/10.1007/s12648-013-0375-4

    CAS  Article  Google Scholar 

  4. Hadi HA, Ismail RA, Almashhadani NJ (2019) Preparation and Characteristics Study of Polystyrene/Porous Silicon Photodetector Prepared by Electrochemical Etching. J Inorg Organomet Polym 29:1100–1110. https://doi.org/10.1007/s10904-019-01072-9

    CAS  Article  Google Scholar 

  5. Soboleva E, Geydt P, Zakharchuk I, Spivak Y, Moshnikov V, Lähderanta E (2018) Properties of Porous Silicon Precipitated with Nickel for Gas Sensors. Sensor Lett 16:672–676

    Article  Google Scholar 

  6. Antropov IM, Demidovich GB, Kozlov SN (2011) Sensitivity of porous silicon–nickel composite to methane adsorption. Tech Phys Lett 37:213–215

    CAS  Article  Google Scholar 

  7. Kononova IE, Moshnikov VA, Olchowik G, Lenshin AS, Gareev KG, Soboleva EA, Kuznetsov VV, Olchowik JM (2014) The preparation and properties of “porous silicon-nickel ferrite” nanoheterocomposites for gas detectors. JSST 71:234–240

    CAS  Google Scholar 

  8. Moshnikov VA, Gracheva IE, Lenshin AS, Spivak YM, Anchkov MG, Kuznetsov VV, Olchowik JM (2012) Porous silicon with embedded metal oxides for gas sensing applications. J Non-Cryst Solids 358:590

    CAS  Article  Google Scholar 

  9. Volovlikova OV, Shilyaeva YI, Berezkina AY, Smirnov DI, Gavrilov SA (2018) Investigation of the phase formation from Ni-modified nanostructured silicon. J Phys Conf Ser 987:012035. https://doi.org/10.1088/1742-6596/987/1/012035

    CAS  Article  Google Scholar 

  10. Nabil M, Elnouby M, Gayeh N, Sakr AH, Motaweh HA (2017) Enhancement of porous silicon photoluminescence using (Ni) treatment. IOP Conf Series: Mater Sci Eng 248:012001. https://doi.org/10.1088/1757-899X/248/1/012001

    Article  Google Scholar 

  11. Fedotov AK, Prischepa SL, Svito IA, Redko SV, Saad A, Mazanik AV, Dolgiy AL, Fedotova VV, Zukowski P, Koltunowicz TN (2016) Carrier transport in porous-Si/Ni/c-Si nanostructures. J Alloys Compd 657:21–26

    CAS  Article  Google Scholar 

  12. Granitzer P, Rumpf K, Poelt P, Reissner M (2019) Magnetic characteristics of Ni-filled luminescent porous silicon. Front Chem 7:41. https://doi.org/10.3389/fchem.2019.00041

    CAS  Article  PubMed  PubMed Central  Google Scholar 

  13. Das M, Sarmah S, Sarkar D (2017) UV-visible optical photo-detection from porous silicon (PS) MSM device. Superlattice Microst 101:228–235. https://doi.org/10.1016/j.spmi.2016.11.052

    CAS  Article  Google Scholar 

  14. Ismail RA, Alwan AM, Ahmed AS (2017) Preparation and characteristics study of nano-porous silicon UV photodetector. Appl Nanosci 7:9–15. https://doi.org/10.1007/s13204-016-0544-9

    CAS  Article  Google Scholar 

  15. Das M, Sarkar D (2017) UV-Vis photodetection of porous silicon (PS) MSM structure passivated with CdS. AIP Conf Proc 1832:080058. https://doi.org/10.1063/1.4980518

    CAS  Article  Google Scholar 

  16. Kassim ST, Hadi HA, Ismail RA (2020) Fabrication and characterization of high photosensitivity CuS/ porous silicon heterojunction photodetector. Optik - Int J Light Electron Opt 221:165339

    CAS  Article  Google Scholar 

  17. Schroder DK (2006) “Semiconductor material and device characterization” 3rd edition, a John Wiley and Sons, INC., publication, USA

  18. Tung RT (2000) Chemical bonding and Fermi level pinning at metal-semiconductor interfaces. Phys Rev Lett 84:6078–6081

    CAS  Article  Google Scholar 

  19. Hadjersi T, Gabouze N (2008) Photodetectors based on porous silicon produced by ag-assisted electrolessetching. Opt Mater 30:865869

    Article  Google Scholar 

  20. Ibraheam A, Razaij J, Fakhri M, Abdulwahhab A (2019) Structural, optical and electrical investigations of Al:ZnO nanostructure as UV photodetector synthesized by spray pyrolysis technique. Mater Res Express 6:55916

    CAS  Article  Google Scholar 

  21. Fakhri M, Numan N, Mohammed Q, Abdulla M, Hassan O, Abduljabar S, Ahmed A (2018) Responsivity and response time of nano silver oxide on silicon heterojunction detector. Int J Nanoelectron Mater 11:109–114

    Google Scholar 

  22. Hadi HA (2014) Fabrication, Morphological and Optoelectronic Properties of Antimony on Porous Silicon as MSM Photodetector. JFundam Appl Sci 6:175–186

    Article  Google Scholar 

  23. Ismail RA, Mohsin MH, Ali AK, Hassoon KI (2020) SuleErten-Ela, preparation and characterization of carbon nanotubes by pulsed laser ablation in water for optoelectronic application. Physica E: Low-dimensional Syst Nanostruct 119:113997

    CAS  Article  Google Scholar 

  24. Ismail RA, Khashan KS, Jawad MF, Mousa AM, Mahdi F (2018) Preparation of low cost n-ZnO/MgO/p-Si heterojunction photodetector by laser ablation in liquid and spray pyrolysis. Mater Res Express 5:055018

    Article  Google Scholar 

  25. Ismail R, Zaidan S, Kadhim R Preparation and characterization of aluminum oxide nanoparticles by laser ablation in liquid as passivating and anti-reflection coating for silicon photodiodes. Appl Nanosci 7(201):477–487

  26. Ismail R, Khashan K (2017) A. Alwan1, study of the effect of incorporation of CdS nanoparticles on the porous silicon photodetector. Silicon 9:321–326

    CAS  Article  Google Scholar 

  27. Kim J, Joo SS, Lee KW, Kim JH, Shin DH, Kim S, Choi SH (2014) Near-ultraviolet-sensitive graphene/porous silicon photodetectors. ACS Appl Mater Interfaces 6:20880–20886

    CAS  Article  Google Scholar 

  28. Ismail R (2010) Fabrication and characterization of photodetector based on porous silicon. e-J Surf Sci Nanotech 8:388–391

    CAS  Article  Google Scholar 

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Acknowledgments

The authors would like to thank Mustansiryiah University Baghdad –Iraq and University of Technology –Iraq for their logistic support.

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Hasan and Raid conceived of the presented idea.

Hasan and Raid supervised the finding of this work.

Raid and Hasan discussed the results and contributed equally to the final manuscript.

Hasan and Raid conducted the experiments.

Raid and Hasan provided critical feedback and helped shape the research, analysis and manuscript.

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Correspondence to Hasan A. Hadi.

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Hadi, H.A., Ismail, R.A. Preparation and Characteristics Study of High-Quantum Efficiency Ni/PSi/c-Si and cd/PSi/c-Si Double-Junction Photodetectors. Silicon (2022). https://doi.org/10.1007/s12633-022-01845-x

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  • DOI: https://doi.org/10.1007/s12633-022-01845-x

Keywords

  • Optoelectronics
  • Electrochemical etching
  • Porous silicon
  • Double-junction
  • Photodetector