Abstract
This paper presents the design and simulations of 5 nm HEMT. The analysis of analog parameters, electrical parameters and the RF performance of the 5 nm HEMT has been done using SILVACO TCAD tool. Here we have designed the HEMT with different materials such as AlGaAs /GaAs / SiC and the high k dielectric material HfO2. The drain current Ids aquired for the HfO2 dielectric material in the 5 nm technology HEMT is 1.4 × 10-7Amperes which is efficient when contrast with SiO2 dielectric. The DIBL value obtained is 0.12 mV/V.By using SILVACO we have measured the transfer and output characteristic plots, threshold voltage(Vth), transconductance(Gm), cut-off frequency, saturation current(Idss). The short channel effects are minimized and the designed structure can be used at high frequency applications.
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The authors would like to Thanks the Reviewers for their valuable suggestions to improve the quality of the manuscript.
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Author 1,2,3,4 (K Girija Sravani, K.Srinivasa Rao, M Suman, B.Pravallika): Conceived and design the analysis, Contributed data and analysis tools, and wrote the paper. Author 5,6,7,8 (K.Sravani Annapurna, G Vaishnavi, K Ruth Ramya, M.Aditya): Performed the analysis, Calibrated the results, and wrote the paper.
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Kondavitee, G.S., Rao, K.S., Suman, M. et al. Design and Analysis of HEMT by 5 nm Technology. Silicon 15, 2199–2209 (2023). https://doi.org/10.1007/s12633-022-01795-4
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DOI: https://doi.org/10.1007/s12633-022-01795-4