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AlInN/GaN HEMT on Silicon Substrate with GD-Field-Plate: Modelling and Simulation of Electric-Field and Breakdown-Voltage Characteristics

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Abstract

An analytical modelling of electric field and breakdown-voltage characteristics of AlInN/GaN HEMT on silicon substrate with field plate at drain and gate regions is presented. In the model development, GaN buffer and Si substrate regions are treated as depletion regions. The developed model gives deep physical understandings of the electric field and breakdown-voltage characteristics of AlInN/GaN HEMT devices. The avalanche breakdown of a device appears in the vertical interface or edges of lateral field-plate structures. The relationship among vertical and lateral breakdown with respect to analytical modelling is presented. The breakdown characteristics are analyzed with device parameters including thickness of regions, length of field plate and distance between gate and drain. These analytical model characteristics are verified by matching with numerical simulations and are found in good agreement. The developed model can be used as an effective direction for optimization of device to accomplish better performance.

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Funding

The authors declare that no funds, grants, or other support were received during the preparation of this manuscript.

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Authors and Affiliations

  1. Department of ECE, Marri Laxman Reddy Institute of Technology and Management, Hyderabad, India

    G. Amarnath

  2. Department of ECE, Vignana Bharathi Institute of Technology, Hyderabad, India

    V. Sharmila

  3. Department of ECE, Sreenidhi Institute of Science & Technology, Hyderabad, India

    Y. Sreenivasulu

  4. Department of ECE, Vardhaman College of Engineering, Hyderabad, India

    D. Krishna

  5. Department of EEE, Marri Laxman Reddy Institute of Technology and Management, Hyderabad, India

    A. Vinod

Authors
  1. G. Amarnath
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  2. V. Sharmila
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  3. Y. Sreenivasulu
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  4. D. Krishna
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  5. A. Vinod
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Contributions

All authors contributed to the study conception and design. Modelling and Simulation analysis were performed by G. Amarnath, V. Shramila and Y. Sreenivasulu. Material preparation, data collection and the first draft of the manuscript was written by D. Krishna and A. Vinod. Manuscript is revised as per reviewer comments and preparation of responses to reviewer is carried by G. Amarnath, V. Shramila and Y. Sreenivasulu. All authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.”

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Correspondence to G. Amarnath.

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Amarnath, G., Sharmila, V., Sreenivasulu, Y. et al. AlInN/GaN HEMT on Silicon Substrate with GD-Field-Plate: Modelling and Simulation of Electric-Field and Breakdown-Voltage Characteristics. Silicon 14, 10327–10335 (2022). https://doi.org/10.1007/s12633-022-01771-y

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  • DOI: https://doi.org/10.1007/s12633-022-01771-y

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