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Compression of Gain in n-Channel MESFET for MIMO Applications

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Abstract

A new n-channel recessed Metal semiconductor field effect transistor (MESFET) with different materials is designed for high power applications in Multi Input Multi Output (MIMO) systems in this paper. Based on material properties and electrical characteristics of MESFET, a SPICE model of the proposed device is developed. For high performance power switches, the power MESFETs are used in most of the applications. The employability of the technology is validated by the electrical measurements of the device. The operational mechanism has been shown by the characterizations done on the proposed device. To optimize the electrical performance, the contact resistance technique has to be enhanced. In this work, the output power and Gain compression of proposed n-channel MESFET at 100 MHz and 1 GHz for high input power is obtained. The output power at fundamental frequency of operation for high input power is also obtained.

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Acknowledgements

The author would like thank the NIT Silchar for providing necessary computational tools.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Kakatiya Institute of Technology & Science, Warangal, India

    Umamaheshwar Soma

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  1. Umamaheshwar Soma
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Author (Umamaheshwar Soma) studied, calibrated the results for applications and wrote the paper.

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Correspondence to Umamaheshwar Soma.

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Soma, U. Compression of Gain in n-Channel MESFET for MIMO Applications. Silicon 14, 9669–9673 (2022). https://doi.org/10.1007/s12633-022-01721-8

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  • DOI: https://doi.org/10.1007/s12633-022-01721-8

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