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Analytical modeling and Simulation Based Investigation of Triple material surrounding gate heterojunction tunnel FET

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Abstract

A two-dimensional analytical model is proposed in this paper for surface potential and drain current on Triple Material Surrounding Gate Heterojunction Tunnel Field Effect Transistor (HJ-TFET). The theoretical analysis is performed to break down the 2D Poisson Equations into two 1D equations. By implementing Finite Differentiation Method and varying work functions, Triple Material Gates are decomposed into three different individual gates with different work functions. These individual 1D Poisson equations that are decomposed are combined by applying sufficient boundary constraints. As a result, this reduces the difficulty of solving 2D Poisson equations. The expressions of surface potential and drain current are made simpler for the proposed analytical model. Finally, the outcomes of the study are correlated with the TCAD simulation. The proposed model is therefore validated to explain the nature of the Triple Material Surrounding Gate Heterojunction TFETs.

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Acknowledgements

The authors are grateful to the Management of “Thiagarajar college of Engineering”, Madurai for the support extended to carry out this research work.

Funding

No funding was received to assist with the preparation of this manuscript.

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Authors and Affiliations

  1. Department of CSE, Thiagarajar College of Engineering, Madurai , India

    M. Suguna

  2. Department of ECE, Thiagarajar College of Engineering, Madurai, India

    V. A. Nithya sree, R. Kaveri, M. Hemalatha & N. B. Balamurugan

  3. Department of ECE, National Institute of Technology, Thiruchirapalli, India

    D. Sriramkumar

  4. Department of ECE, Velammal College of Engineering and Technology, Madurai, India

    P. Suveetha Dhanaselvam

Authors
  1. M. Suguna
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  2. V. A. Nithya sree
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  3. R. Kaveri
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  4. M. Hemalatha
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  5. N. B. Balamurugan
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  6. D. Sriramkumar
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  7. P. Suveetha Dhanaselvam
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Contributions

Review and editing, Support for simulation work- [Dr.M.Suguna].

Draft preparation- [V. A Nithya sree], [R.Kaveri]

Draft preparation-[M.Hemalatha].

Idea of the article, resources, Supervision-[Dr.N.B.Balamurugan].

Result and validation – [Dr.D.Sriram kumar], [Dr.P.Suveetha Dhanaselvam].

Corresponding author

Correspondence to M. Suguna.

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Suguna, M., Nithya sree, V.A., Kaveri, R. et al. Analytical modeling and Simulation Based Investigation of Triple material surrounding gate heterojunction tunnel FET. Silicon 14, 10729–10740 (2022). https://doi.org/10.1007/s12633-022-01687-7

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  • DOI: https://doi.org/10.1007/s12633-022-01687-7

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