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Novel Attributes and Analog Performance Analysis of Dual Material Gate FINFET Based High Sensitive Biosensors

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Abstract

In this study dual material gate FinFET is designed to work as a dielectric modulated biosensor for detecting a variety of proteins. Surface potential, Electric field, Threshold voltage, and Sensitivity are the electrical parameters of the highly sensitive biosensors that are examined using the finite difference approach. The introduction of biomolecules causes a change in the device dielectric constant, which results in the change of threshold voltage. To get the optimal design, several criteria such as doping, thickness, and height are to be modified. A comparison is made between the developed Dual Material Gate (DMG) FinFET biosensor and the single material gate FET. The results depict that, the DMG FinFET biosensors have superior sensitivity and they have extremely strong electrostatic integrity in low power system on chip applications. The parameters analyzed here are verified through graphical simulation using TCAD software tool.

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Acknowledgments

This Project is Supported by Science and Engineering Research Board (SERB) under the Scheme “Teachers Associate for Research Excellence (TARE) with reference no (TAR/2020/000231) and its gratefully acknowledged.

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Authors and Affiliations

Authors

Contributions

Review and editing, Support for simulation work- [Dr.M.Suguna].

Draft preparation- [V.Charumathi].

Draft preparation-[M.Hemalatha].

Idea of the article, resources, Supervision-[Dr.N.B.Balamurugan].

Result and validation –[Dr.D.Sriram kumar], [Dr.P.Suveetha Dhanaselvam].

Corresponding author

Correspondence to M. Suguna.

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Suguna, M., Charumathi, V., Hemalatha, M. et al. Novel Attributes and Analog Performance Analysis of Dual Material Gate FINFET Based High Sensitive Biosensors. Silicon 14, 2389–2396 (2022). https://doi.org/10.1007/s12633-022-01682-y

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  • DOI: https://doi.org/10.1007/s12633-022-01682-y

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