Abstract
In this study dual material gate FinFET is designed to work as a dielectric modulated biosensor for detecting a variety of proteins. Surface potential, Electric field, Threshold voltage, and Sensitivity are the electrical parameters of the highly sensitive biosensors that are examined using the finite difference approach. The introduction of biomolecules causes a change in the device dielectric constant, which results in the change of threshold voltage. To get the optimal design, several criteria such as doping, thickness, and height are to be modified. A comparison is made between the developed Dual Material Gate (DMG) FinFET biosensor and the single material gate FET. The results depict that, the DMG FinFET biosensors have superior sensitivity and they have extremely strong electrostatic integrity in low power system on chip applications. The parameters analyzed here are verified through graphical simulation using TCAD software tool.
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References
Deshmukh R, Khanzode A, Kakde S, Shah N (2016) Comparing FinFETs: SOI vs bulk. Inst Electr Electron Eng (1):1–4
Li C, Zhuang Y, Zhang L (2012) Simulation study on FinFET with tri-material gate. IEEE (1):1–3
Vimalaa P, Arun Samuel TS (2020) TCAD simulation study of single-, double-, and triple-material gate engineered Trigate FinFETs. Semiconductors 54(4):501–505
Balamurugan NB, Sankaranarayanan K, Suguna M (2008) A new scaling theory for the effective conducting path effect of dual material surrounding gate nanoscale MOSFETs. J Semiconduct Technol Sci 8(1):92–97
Bibi F, Villain M, Guillaume C, Sorli B, Gontard N (2016) A review: origins of the dielectric properties of proteins and potential development as bio-sensors. Sensors 16(8):1232
Mounir Mahmoud M, Soin N (2019) A comparative study of lifetime reliability of planar MOSFET and FinFET due to BTI for the 16 nm CMOS technology node based on reaction-diffusion model. Microelectron Reliab 97:53–65
Sallese J-M et al (2011) Charge-based modeling of junctionless double-gate field-effect transistors. IEEE Trans Electron Devices 58(8):2628–2637
Sallese J-M et al (2010) The equivalent-thickness concept for doped symmetric DG MOSFETs. IEEE Trans Electron Devices 57(11):2917–2924
Nagy D, Indalecio G, GarcíA-Loureiro AJ, Elmessary MA, Kalna K, Seoane N (2018) FinFET versus gate-all-around nanowire FET: performance, scaling, and variability. IEEE J Electron Devices Soc 6:332–340
RajeshSaha SB, Bhowmick B (2015) 3D analytical modeling of surface potential, threshold voltage, and subthreshold swing in dual-material-gate (DMG) SOI FinFETs. Eng Sci Technol 17(4):153–162
Rollo S, Rani D, Leturcq R, Olthuis W, García CP (2019) High aspect ratio fin-ion sensitive field effect transistor: compromises toward better electrochemical biosensing. Nano Lett 19(5):2879–2887
Rahman E, Shadman A, Khosru QD (2017) Effect of biomolecule position and fill in factor on sensitivity of a Dielectric Modulated Double Gate Junctionless MOSFET biosensor. Sens Bio-Sens Res 13:49–54
Buvaneswari B, Balamurugan NB (2019) 2D analytical modeling and simulation of dual material DG MOSFET for biosensing application. AEU-Int J Electron Commun 1(99):193–200
Buvaneswari B, Balamurugan NB (2019) Sensitivity analysis of double gate metal oxide semiconductor field effect transistor for bio-sensing applications. J Nanoelectron Optoelectron 1(14):136–145
Buvaneswari B, Balamurugan NB (2018) Comparative analytical analysis of various configurations of nanoscaled dielectric-modulated double gate MOSFET based biosensors. J Optoelectron Adv Mater 20:526–536
Karthigai Pandian M, Balamurugan NB (2014) Analytical threshold voltage modeling of surrounding gate silicon nanowire transistors with different geometries. J Electr Eng Technol 9(6):2079–2088
SuveethaDhanaselvam P, Balamurugan NB (2014) Performance analysis of fully depleted triple material surrounding gate (TMSG) SOI MOSFET. J Comput Electron 13(2):449–455
Preethi S, Balamurugan NB (2020) Analytical modeling of surrounding gate junctionless mosfet using finite differentiation method. Silicon 13(9):2921–2931
Huang G, Hu S, Feng J, Liu Y, Wang L, Zheng L (2016) Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs. Microelectron 50:60–65
Abd El Hamid H, Guitart JR, Kilchytska V, Flandre D, Iniguez B (2007) A 3-D analytical physically based model for the subthreshold swing in Undoped Trigate FinFETs. IEEE Trans. Electron Devices 54(9):2487–2496
Mehrad M, Orouji A (2009) A new nanoscale and high temperature field effect transistor: Bi level FinFET. Physica E 44(3):654–658
Havaldar DS, Dasgupta A, Dasgupta N (2006) Study of dual material gate (DMG) FinFET using three-dimensional numerical simulation. Int J Nanosci 5(5):541–545
Saha P, Dash DK, Sarkar SK (2019) Nanowire reconfigurable FET as biosensor: Based on dielectric modulation approach. Solid State Electron 161. https://doi.org/10.1016/j.sse.2019.107637
Sehgal HD et al (2021) Performance analysis and optimization of under-gate dielectric modulated Junctionless FinFET biosensor. IEEE Sensors J21(17):18897–18904
Maurya RK, Bhowmick B (2021) Review of FinFET devices and perspective on circuit design challenges. Silicon 1–9
Acknowledgments
This Project is Supported by Science and Engineering Research Board (SERB) under the Scheme “Teachers Associate for Research Excellence (TARE) with reference no (TAR/2020/000231) and its gratefully acknowledged.
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Review and editing, Support for simulation work- [Dr.M.Suguna].
Draft preparation- [V.Charumathi].
Draft preparation-[M.Hemalatha].
Idea of the article, resources, Supervision-[Dr.N.B.Balamurugan].
Result and validation –[Dr.D.Sriram kumar], [Dr.P.Suveetha Dhanaselvam].
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Suguna, M., Charumathi, V., Hemalatha, M. et al. Novel Attributes and Analog Performance Analysis of Dual Material Gate FINFET Based High Sensitive Biosensors. Silicon 14, 2389–2396 (2022). https://doi.org/10.1007/s12633-022-01682-y
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DOI: https://doi.org/10.1007/s12633-022-01682-y