Abstract
To get an insight into the isotype heterojunction (IHJ) properties, the influence of gamma irradiation (GI) on the structural and electrical properties of n-ZnSe/n-Si has been presented. The ZnSe thin films were deposited onto the n-Si substrate by thermal evaporation technique. The X-ray diffraction (XRD) studies revealed the nanocrystalline nature of ZnSe thin films with prominent (111) orientation. The gamma irradiated samples displayed no crystallographic phase transformation up to 10 kGy irradiation doses. But noticeable and inconsistent modifications in the different lattice parameters were observed due to irradiation-induced effects. From the analysis of I-V characteristics, it has been found a similar trend in the variation of lattice mismatch, Schottky barrier height and interface trap parameter at different irradiation doses. Thus demonstrating the poor rectification properties of n-ZnSe/n-Si IHJs due to intrinsic and gamma-induced defects, and their role in the space charge limited conduction (SCLC) mechanism that significantly dominating over the thermionic emission (TE) mechanism across the barrier.
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References
Milnes AG (1986) Semiconductor heterojunction topics: introduction and overview. Solid- State Electron 29:99–121
Chandan G, Mukundan S, Mohan L, Roul B, Krupanidhi SB (2015) Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias. J Appl Phys 118:024503
Peibst R, Rugeramigabo EP, Hofmann KR (2012) Electrical characterization and modelling of n–nGe-Si heterojunctions with relatively low interface state densities. J Appl Phys 112:124502
Wang P, Jin C, Wu X, Zhan H, Zhou Y, Wang H, Kang J (2012) Quality improvement of ZnO thin layers overgrown on Si(100) substrates at room temperature by nitridation pretreatment. AIP Adv 2:022139
Yawata S, Anderson RL (1965) Optical modulation of current in Ge-Si n-n heterojunctions. Phys Status Solidi B 12:297–304
Kim HY, Kim JH, Kim YJ, Chae KH, Whang CN, Song JH, Im S (2001) Photoresponse of Si Detector based on n-ZnO/p-Si and n-ZnO/n-Si structures. Opt Mater 17:141–144
Tan ST, Sun XW, Zhao JL, Iwan S, Cen ZH, Chen TP, Ye JD, Lo GQ, Kwong DL, Teo KL (2008) Ultraviolet and visible electroluminescence from n - Zn O ∕ Si O x ∕ (n, p) – Si heterostructured light-emitting diodes. Appl Phys Lett 93:013506
Jeon H, Ding J, Nurmikko AV, Xie W, Grillo DC, Kobayashi M, Gunshor RL, Hua GC, Otsuka N (1992) Blue and green diode lasers in ZnSe-based quantum wells. Appl Phys Lett 60:2045–2047
Parent DW, Rodriguez A, Ayers JE, Jain FC (2003)Photo-assisted MOVPE grown (n) ZnSe/(p+) GaAs heterojunction solar cells. Solid-State Electron 47(4):595–599
Kühnelt M, Leichtner T, Kaiser S, Hahn B, Wagner HP, Eisert D, Bacher G, Forchel A (1998) Quasiphase matched second harmonic generation in ZnSe waveguide structures modulated by focused ion beam implantation. Appl Phys Lett 73:584–586
Kim BG, Garmire E, Shibata N, Zembutsu S (1987) Optical bistability and nonlinear switching due to increasing absorption in single-crystal ZnSe waveguides. Appl Phys Lett 51(7):475–477
Kulp BA, Detweiler RM (1963) Threshold for electron radiation damage in ZnSe. Phys Rev 129:2422–2424
Vali IP, Shetty PK, Mahesha MG, Keshav R, Sathe VG, Phase DM, Choudhary RJ (2018) Gamma irradiation effects on Al/n-Si Schottky junction properties. Nuclear Inst Methods in Physics Research B 436:191–197
Keshav R, Vali IP, Shetty PK, Vaishnavi KS, Rajeshwari M, Mahesha MG (2020) I – V characterization of vacuum deposited zinc selenide – silicon hetero junction. Indian J Pure Appl Phys 58:841–846
Güllü HH, Isik M, Gasanly NM, Parlak M (2020) Influence of temperature on optical properties of electron-beam-evaporated ZnSe thin film. Phys Scr 95:075804
Güllü HH, Bayraklı Ö, Yildiz DE, Parlak M (2017) Study on the electrical properties of ZnSe/Si heterojunction diode. J Mater Sci: Mater Electron 28:17806–17815
Venkatachalam S, Mangalaraj D, Narayandass Sa K, Velumani S, Schabes-Retchkiman P, Ascencio JA (2007) Structural studies on vacuum evaporated ZnSe/p-Si Schottky diodes. Mater Chem Phys 103:305–311
Wongcharoen N, Gaewdang T (2018) Electrical properties of nanostructure n-ZnSe/p-Si(100) heterojunction thin film diode. Key Eng Mater 775:246–253
Venkatachalam S, Mangalaraj D, Narayandass Sa K (2006) Influence of substrate temperature on the structural, optical and electrical properties of zinc selenide (ZnSe) thin films. J Phys D: Appl Phys 39:4777–4782
Venkatachalam S, Kanno Y, Mangalaraj D, Narayandass Sa K (2007) Effect of boron ion implantation on the structural, optical and electrical properties of ZnSe thin films. Phys B 390:71–78
Sze SM (1981) Physics of semiconductor devices. Wiley, New York
Rhoderick EH, Williams RH (1988)Metal–semiconductor contacts. OxfordScience Publication, Oxford
Cheung SK, Cheung NW (1986) Extraction of Schottky diode parameters from forward current-voltage characteristics. Appl Phys Lett 49:85–87
Vali IP, Shetty PK, Mahesha MG, Petwal VC, Dwivedi J, Phase DM, Choudhary RJ (2018) Implications of electron beam irradiation on Al/n-Si Schottky junction properties. Microelectron Reliab 91:179–184
Hassun HK, Ali HM, Hasan SQA, Maki SA (2019) Effect of alumunium on the structural, optical, electrical, and photovoltaic properties of ZnSe/n-Si heterojunction solar cell. J Eng Appl Sci 14:4773–1779
Güzeldir B, Sa˘glam M, Ates A (2010) Analysis of the electrical characteristics of Zn/ZnSe/n-Si/Au–Sb structure fabricated using SILAR method as a function of temperature. J Alloys Compd 506:388–394
Vali IP, Shetty PK, Mahesha MG, Petwal VC, Dwivedi J, Phase DM, Choudhary RJ (2020) Electron and gamma irradiation effects on Al/n–4H–SiC Schottky contacts. Vacuum 172:109068
Tung RT (2001) Recent advances in Schottky barrier concepts. Mater Sci Eng RRep 35:1–138
Röhr JA, Moia D, Haque SA, Kirchartz T, Nelson J (2018) Exploring the validity and limitations of the Mott–Gurney law for charge-carrier mobility determination of semiconducting thin-films. J Phys: Condens Matter 30:105901
Acknowledgements
The authors are grateful to Manipal Academy of Higher Education and Manipal Institute of Technology. Manipal for providing experimental facility.
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Conceptualization: Indudhar Panduranga Vali, Rashmitha Keshav, M Rajeshwari, K S Vaishnavi.
Methodology: Indudhar Panduranga Vali, Rashmitha Keshav, M Rajeshwari, K S Vaishnavi.
Formal analysis and investigation: Indudhar Panduranga Vali, Rashmitha Keshav, M Rajeshwari, K S Vaishnavi.
Writing - original draft preparation: Indudhar Panduranga Vali, Rashmitha Keshav, M Rajeshwari, K S Vaishnavi.
Writing - review and editing: M G Mahesha, Pramoda Kumara Shetty.
Resources: M G Mahesha, Pramoda Kumara Shetty.
Supervision: M G Mahesha, Pramoda Kumara Shetty.
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Vali, I.P., Keshav, R., Rajeshwari, M. et al. Gamma Irradiation Effects on n-ZnSe/n-Si Isotype Heterojunctions. Silicon 14, 3785–3794 (2022). https://doi.org/10.1007/s12633-021-01429-1
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DOI: https://doi.org/10.1007/s12633-021-01429-1