Abstract
Ion Sensitive Field Effect Transistors (ISFET) are most widely used in medical applications due to simple integration process, measurement of sensitivity and its dual properties. These ISFETs are originated from Metal Oxide Semiconductor Field Effect Transistors (MOSFET) with improvements in structure. ISFETs are used as bio-sensors for the detection of biomarkers in blood, DNA replication and several other medical applications. In this article, we design the ISFET pH sensor in two dimensions with integration of two models namely, semiconductor model and electrolyte model are represented using manageable global equations. The sensitivity of ISFET with different oxide layers is measured and compared. We also measure the sensitivity of the designed 2D-ISFET in two different solutions and compare it with different oxides to know the best oxide material to be used to design the device.
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Acknowledgements
The authors would like to acknowledge Indian Institute of Technology Hyderabad (IIT Hyderabad) for backing us with some experimental work carried out and the tool (COMSOL Semiconductor Module) required for simulating this work. And M. Durga Prakash thankfully acknowledges this publication as an outcome of the R&D work undertaken project under the Start-up Research Grant (File No.: SRG/2019/002236) Scheme of Department of Science and Technology (DST), Government of India, being Science Engineering Research Broad (SERB).
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M. Durga Prakash, Alluri Navaneetha, Asisa Kumar Panigrahy, and Beulah Grace Nelam: Conceptualization; M. Durga Prakash, Beulah Grace Nelam and Shaik Ahmadsaidulu: investigation; M. Durga Prakash, Beulah Grace Nelam, Alluri Navaneetha and Shaik Ahmadsaidulu: resources; M. Durga Prakash and Beulah Grace Nelam,: data curation; Beulah Grace Nelam, Alluri Navaneetha, and Asisa Kumar Panigrahy: writing—original draft preparation; M. Durga Prakash, and Asisa Kumar Panigrahy: writing—review and editing; M. Durga Prakash and Shaik Ahmadsaidulu: visualization; M. Durga Prakash: supervision;
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Prakash, M.D., Nelam, B.G., Ahmadsaidulu, S. et al. Performance Analysis of Ion-Sensitive Field Effect Transistor with Various Oxide Materials for Biomedical Applications. Silicon 14, 6329–6339 (2022). https://doi.org/10.1007/s12633-021-01413-9
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DOI: https://doi.org/10.1007/s12633-021-01413-9