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An Accurate Model of Threshold Voltage and Effect of High-K Material for Fully Depleted Graded Channel DMDG MOSFET

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Abstract

In this study, an accurate model for threshold voltage of graded channel dual material double gate (GCDMDG) structure metal-oxide-semiconductor (MOS) has been established and a comparative explored by using SiO2 as well as HfO2 materials. The threshold voltage roll-off and drain-induced-barrier-lowering (DIBL) have been explored. The effect of different device parameters like temperature, oxide thickness, film thickness, etc. on device performance has been evaluated to check the figure of merit over the DMDG structure. It is found that the value of threshold voltage is higher in GCDMDG structure over its counterpart but the roll-off nature is quite small. The main purpose is to reduce the short channel effects (SCEs), that has been generated due to the miniaturization of the device. For the confirmation of the model, the results have been affirmed by TCAD.

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Acknowledgements

The Authors are highly indebted to National Institute of Technology, Silchar, and Mizoram University (A Central University), Aizawl for supporting this technical work.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Mizoram University (A Central University), Aizawl, 796 004, India

    Himeli Chakrabarti, Reshmi Maity & N. P. Maity

  2. Department of Electronics and Communication Engineering, Regent Education and Research Foundation Group of Institutions, Kolkata, 700 121, India

    Himeli Chakrabarti

  3. Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, 788 010, India

    S. Baishya

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  1. Himeli Chakrabarti
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  2. Reshmi Maity
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  4. N. P. Maity
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Correspondence to N. P. Maity.

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Chakrabarti, H., Maity, R., Baishya, S. et al. An Accurate Model of Threshold Voltage and Effect of High-K Material for Fully Depleted Graded Channel DMDG MOSFET. Silicon 14, 9763–9772 (2022). https://doi.org/10.1007/s12633-021-01412-w

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