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Photoresponsivity, Electrical and Dielectric Properties of GaAs/P-Si Heterojunction-Based Photodiode

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The current work discusses the structural, electrical, and dielectric properties of Au/n-GaAs/p-Si/Al heterojunction diode which was prepared by liquid phase epitaxy (LPE). Scientists focused in their study on the differences in the crystal lattice constant between silicon and gallium arsenide, as well as the structural defects of the prepared films, trying to overcome the limitation of the crystal lattice mismatch between the two materials using an interfacial layer or buffer layer. We focused in our study on the aspects that researchers did not address such as the dielectric and electrical properties of gallium arsenide which was deposited directly on silicon despite the difference in the crystal lattice. By capacitance-voltage investigation, a comprehensive study of the dielectric constant (Ɛ’), dielectric loss (Ɛ”) where the real part represents the ability of the material to store the electric energy, while the imaginary part represents the dissipation of energy through the material. The Cole-Cole diagram has been presented in addition to their relationships to voltage, current, temperature. The electrical parameters such as ideality factor (n), barrier height (ϕb), series resistance (Rs) were determined from the conventional and Cheung’s methods. The photo-transient characteristics performed under the illumination of 30 mW/cm2 have shown rapid response to light.

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Acknowledgments

This work was supported by the Ministry of Higher education and the scientific research of Egypt.

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Authors and Affiliations

  1. Solid State Electronics Laboratory, Solid State Physics Department, Physics Research Division, National Research Centre, 33 El-Bohouth St., Dokki, Giza, 12622, Egypt

    A. Ashery

  2. Photometry and Radiometry Division, National Institutes of Standards (NIS), Tersa St, Al-Haram, Giza, 12211, Egypt

    A. E. H. Gaballah

  3. Microwave Physics and Dielectrics Department, Physics Division, National Research Centre, Dokki, Giza, 12622, Egypt

    Mohamed M. M. Elnasharty

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Ashery, A., Gaballah, A.E.H. & Elnasharty, M.M.M. Photoresponsivity, Electrical and Dielectric Properties of GaAs/P-Si Heterojunction-Based Photodiode. Silicon 14, 6169–6183 (2022). https://doi.org/10.1007/s12633-021-01389-6

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