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Gate All Around Dopingless Nanotube TFET Biosensor with Si0.5Ge0.5 – Based Source

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Abstract

Through this paper, we discuss how Tunnel Field Effect Transistors can be utilized for the detection of biomaterials hence acting as a biosensor. The device proposed is a 3-D Doping less Nanotube Tunnel Field Effect Transistor (DL-NT-TFET) device with a wrap-around gate or a Gate all around to provide maximum control over the charge carriers as surface control increases. The source (p+) and drain (n+) are shaped by utilizing Charge Plasma Technique in which Hafnium metal with work 3.9ev is utilized at the drain side and Platinum metal with work function 5.93 eV is utilized at the source side. This technique is used for simplification in the fabrication as there is no requirement for Doping. For introducing Biomaterial, a cavity is introduced under the gate at the source side. Different dielectric values ranging from k = 1, 2.9, 3.57 ,5,8,12,16,20 is analysed to study the variation in parameters like ID -VGS characteristics, subthreshold slope, electric field, carrier concentration etc. as a part of the results. The objective of our work is to propose a device with the least difficulty in fabrication and improved characteristics like high Ion, low subthreshold slope, high Ion/I off ratio etc.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Amity University Noida, Noida, Uttar Pradesh, India

    Kosheen Wighmal, Giridhar Peddi & Sunny Anand

  2. IBM Pvt. Lmt, Bangalore, India

    Apoorva

  3. University of Glasgow, Glasgow, Scotland

    Naveen Kumar

  4. Jamia Millia Islamia, New Delhi, India

    S. Intekhab Amin

Authors
  1. Kosheen Wighmal
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  2. Giridhar Peddi
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  3. Apoorva
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  4. Naveen Kumar
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  5. S. Intekhab Amin
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  6. Sunny Anand
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Contributions

Kosheen Wighmal: Simulation, TCAD Software, Writing- Original draft preparation.

Peddi Giridhar: TCAD Software, Writing- Original draft preparation.

Apoorva: Simulation, Data curation and Revision.

Naveen Kumar: Simulation, TCAD Software, Logical-Methodology, conceptualization.

S. I. Amin: Revision and Supervision, Validation.

Sunny Anand Simulation, TCAD Software, Writing and Editing, computations.

Corresponding author

Correspondence to Sunny Anand.

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Wighmal, K., Peddi, G., Apoorva et al. Gate All Around Dopingless Nanotube TFET Biosensor with Si0.5Ge0.5 – Based Source. Silicon 14, 5951–5959 (2022). https://doi.org/10.1007/s12633-021-01361-4

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  • DOI: https://doi.org/10.1007/s12633-021-01361-4

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