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Influence of Back Contact Annealing Temperature in the mc-Si Solar Cell Fabrication Process

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Abstract

The boron doped multi-crystalline silicon (mc-Si) ingots were grown using the directional solidification process. Grown ingots were converted into bricks and then to wafers. We have fabricated silicon solar cells from the multi-crystalline silicon wafers. The minority carrier lifetime of the wafers is around 15–25 µs. The effect of back contact annealing temperature has been investigated. Annealing the device at 5830 C for 5 s gives better results. Typical open circuit voltage (Voc) of the devices is around ~ 540-550mV. The best cell had a power conversion efficiency of ~ 9 % with a typical acceptor doping density ~ 2.35 E + 15 per cm3 (The devices reported here do not have AR coating layer, no passivation was done and the surfaces are also not textured).

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References

  1. Lin KM, Lin HH, Dandage HK, Du YC (2019) Pseudo colorization of electroluminescence images of multi-crystalline silicon solar cells for defect inspection. Mod Phys Lett B 33(14&15):1940010

    Article  CAS  Google Scholar 

  2. Photovoltaics report (2020) Fraunhofer Institute for Solar Energy Systems, ©Fraunhofer ISE: Photovoltaics Report, updated: 16 September 2020

  3. Yadav TS, Sharma AK, Kottantharayil A, Basu PK (2018) Low-cost and low-temperature chemical oxide passivation process for large area single crystalline silicon solar cells. Sol Energy 169:270–276

    Article  CAS  Google Scholar 

  4. Cui M, Jin C, Zhuge L, Wu X (2019) The impact of diffusion gettering on solar cell efficiency and light induced degradation. Optik 181:129–133

    Article  CAS  Google Scholar 

  5. Chan C, Hamer P, Bourret-Sicotte G, Chen R, Ciesla A, Hallam B, Payne D, Bonilla RS, Wenham S (2017) Instability of increased contact resistance in silicon solar cells following post-firing thermal processes. Solar 1(11):;1700129

    Google Scholar 

  6. Peral A, Dastgheib-Shirazi A, Fano V, Jimeno JC, Hahn G, Canizo CD (2017) Impact of extended contact cofiring on Multicrystalline silicon solar cell parameters. IEEE J Photovolt 7:91–96

    Article  Google Scholar 

  7. Chan CE, Payne DN, Hallam BJ, Abbott MD, Fung TH, Wenham AM, Tjahjono BS, Wenham SR (2016) Rapid stabilization of high-performance Multicrystalline P-type silicon PERC cells. IEEE J Photovolt 6:1473–1479

    Article  Google Scholar 

  8. Wu S, Wang W, Li L, Yu D, Huang L, Liu W, Wua X, Zhang F (2014) Investigation of the mechanism of the Ag/SiNx firing-through process of screen-printed silicon solar cells. RSC Adv 4:24384–24388

    Article  CAS  Google Scholar 

  9. Peral A, Lelièvre JF, Recart F, Cañizo CD (2012) Defect engineering during the contact co-firing step in an industrial belt furnace. Phys Status Solidi C 209(10):2107–2110

    Article  Google Scholar 

  10. Fukano. K, Hamdi. A, Dhamrin M, Kamisako K (2011) Temperature characteristics of dark i-v curve in crystalline Silicon solar cells. The 21st International Photovoltaic Science and Engineering Conference November 28th - December 2nd, 2011, Fukuoka, Japan

  11. Rakotoniaina JP, Al Rifai MH, Breitenstein. O (2004) Quantitative analysis of the influence of shunts in solar cells by means of lock-in thermography. 3rd World Conference

  12. Ebong. A, Hankey. D, and Yang.L (2013) Developing the next generation low-cost inks for high efficiency multi crystalline silicon solar cells, High Capacity Optical Networks and Emerging/Enabling Technologies 66–71

  13. Schultz O, Glunz SW, Willeke GP (2004) Multicrystalline silicon solar cells exceeding 20 % efficiency. Prog Photovolt Res Appl 12:553–558

  14. Kalyan. A DD, Utpal SJ,SD. G (2021) Effect of diamond-like nanocomposite as antireflection layer on multi-crystalline silicon solar cells. Mater Today Proc 39(5):2046–2049

  15. Weipeng. RT, Z, Ximan. K, Zhongwei DL (2021) Influence of surface structure on the performance of mono-like Si PERC solar cell. Mater Sci Semicond Process 126:105662

    Article  Google Scholar 

  16. Jeong EP, Donggun L (2021) Optimization of laser fired contact process for the formation of an Al-BSF layer. Appl Sci 11:2689

    Article  Google Scholar 

  17. McIntosh KR, Honsberg CB (2000) The influence of edge recombination on a solar cell’s i-v curve. 6th European Photovoltaic Solar Energy Conference

  18. Ali Ibrahim (2011) Dark current -voltage characteristics and lock-in thermography techniques as diagnostic tools for Monocrystalline silicon solar cells. Int J Renew Energy Res 1(3):60–65

    Google Scholar 

  19. Breitenstein O, Langenkamp M (1998) Lock-in contact thermography investigation of lateral electronic inhomogeneities in semiconductor devices. Sens Actuators A 71:46–50

    Article  CAS  Google Scholar 

  20. Crotty G, Daud T, Kachare R (1987) Front surface passivation of silicon solar cells with antireflection coating. J Appl Phys 61:3077

    Article  CAS  Google Scholar 

  21. Ruby D, S, Zaid S, H, Narayanan S (2000) Plasma-texturization for multicrystalline silicon solar cells. Twenty-Eighth IEEE Photovoltaic Specialists Conference. https://doi.org/10.1109/PVSC.2000.915756

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Acknowledgements

This work was supported by the Ministry of  New and Renewable Energy (MNRE), the Government of India (Order. no: 31/58/2013–2014/PVSE & 15-01-2015). The authors are thankful to Prof. K. L. Narasimhan and Prof. B. M. Arora, National Centre for Photovoltaic Research and Education (NCPRE), IIT Bombay for useful discussion. NCPRE at IIT Bombay sanctioned PUMP program to Mr. G. Aravindan, resulted in this research. G Aravindan acknowledges Human Resource Development Group, Council of Scientific & Industrial Research for Direct Senior Research Fellowship, Government of India (Sanction letter no/file no: 08/542(0010)2K19 EMR-I).

Funding

Ministry of New and Renewable Energy (MNRE), the Government of India (Order no: 31/58/2013–2014/PVSE & 15-01-2015).

Human Resource Development Group, Council of Scientific & Industrial Research for Direct Senior Research Fellowship, Government of India (Sanction letter no/file no: 08/542(0010)2K19 EMR-I).

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  1. Research Centre, Sri Sivasubramaniya Nadar College of Engineering, Chennai, India

    G. Aravindan, S. Sanmugavel, S. G. Nagarajan, V. Kesavan, M. Srinivasan & P. Ramasamy

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  1. G. Aravindan
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  2. S. Sanmugavel
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  3. S. G. Nagarajan
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  4. V. Kesavan
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  5. M. Srinivasan
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Following authors have contributed

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S. Sanmugavel,

S. G. Nagarajan,

V. Kesavan,

M. Srinivasan,

P. Ramasamy.

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Correspondence to G. Aravindan.

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Aravindan, G., Sanmugavel, S., Nagarajan, S.G. et al. Influence of Back Contact Annealing Temperature in the mc-Si Solar Cell Fabrication Process. Silicon 14, 9751–9762 (2022). https://doi.org/10.1007/s12633-021-01356-1

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