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Breakdown Voltage Enhancement of Al0.1Ga0.9 N Channel HEMT with Recessed Floating Field Plate

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Abstract

In this paper, electrical and microwave characteristics of Al0.1Ga0.9 N channel HEMTs was reported. The device performance were evaluated for conventional gate, field plate gate, and recessed floating field plate with Silicon nitride (SiN)/Hafnium oxide (HfO2) passivation. The recessed floating field plate HEMT with gate length LG = 0.8 μm, gate to drain distance LGD = 1 μm, and HfO2 (SiN) passivation HEMT reports peak drain current density (IDS) of 0.282(0.288) A/mm at VGS = 0 V, three terminal off-state breakdown voltage (VBR) of 677 (617) V, 6.38 Ω.mm of ON-resistance (RON), transconductance (gm,max) of 93(95) mS/mm, and FT/FMAX of 11.4/49 (12/22) GHz. The HfO2 (SiN) passivation device demonstrated the Johnson figure of merit (JFoM)) of 7.71 (7.404) THz.V and FMAX x VBR product of 33.173 (13.574) THz.V. The high JFoM along with high FMAX x VBR indicates the potential of the ultrawide bandgap AlGaN HEMTs for future power switching and high-power microwave applications. The breakdown voltage (VBR) of the floating field plate HEMT is improved 54 % from conventional HEMT and 31 % improvement from gate field plate HEMT.

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Acknowledgements

The authors acknowledge the Department of Electronics and Communication Engineering, SRM Institute of Science and Technology, Chennai, India for research facility and support to carry out this research work.

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  1. Department of Electronics and Communication Engineering, SRM Institute of Technology and Sciences, Chennai, India

    Ramkumar Natarajan & Eswaran Parthasarathy

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  1. Ramkumar Natarajan
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All the works reported in this paper is original and have done with equal contribution in all the sections by Ramkumar Natarajan and Eswaran Parthasarathy.

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Correspondence to Eswaran Parthasarathy.

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Natarajan, R., Parthasarathy, E. Breakdown Voltage Enhancement of Al0.1Ga0.9 N Channel HEMT with Recessed Floating Field Plate. Silicon 14, 5961–5973 (2022). https://doi.org/10.1007/s12633-021-01322-x

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