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Texturization of Diamond Wire Sawn Mc-silicon by Acid Vapor Etching Followed by Acid Solution Post-treatment

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Abstract

An experimental study on the surface texturization of diamond wire sawn multi-crystalline silicon (DWS mc-Si) wafers by acid vapor etching followed by acid solution post-treatment was carried out. The vapor composition, vapor etching time and the acid solution post-treatment time were optimized based on the surface morphology and reflectance measurement of DWS mc-Si wafers. It is found that acid vapor etching could effectively remove the sawn marks generated by surface cutting and produce micro-pits on the surface, which were the “start etching points” of subsequent acid solution texturization. The uniformity of the surface structure of silicon wafer was greatly improved by adjusting the proportion of acid vapor source, vapor etching time and subsequent solution processing time. An optimized average reflectance of 18.6 % between 400 nm and 1100 nm was achieved, which was expected to be used in the industrial production of high-efficiency solar cells.

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Data Availability

The datasets generated during and/or analysed during the current study are available from the corresponding author on reasonable request.

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Acknowledgements

Authors are grateful to the National Natural Science Foundation of China, the Fundamental Research Funds for the Central Universities, the special fund of Jiangsu province for the transformation of scientific and technological achievements, the open project of Key Laboratory of Materials Preparation and Protection for Harsh Environment, Ministry of Industry and Information Technology and The Special Scientific Innovation Found of Sihong County for their financial support.

Funding

This work has been financially supported the National Natural Science Foundation of China (61774084), the Fundamental Research Funds for the Central Universities (NG2019003), the special fund of Jiangsu province for the transformation of scientific and technological achievements (BA2019047), the open project of Key Laboratory of Materials Preparation and Protection for Harsh Environment, Ministry of Industry and Information Technology (XCA20013-3) and The Special Scientific Innovation Found of Sihong County (H201901).

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Authors and Affiliations

  1. College of Materials Science and Technology, Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics & Astronautics, Nanjing, 210016, China

    Weitao Fan, Honglie Shen, Chunming Chen, Yanqi Li, Shun Wang & Xin Zhang

  2. Ycergy (Suzhou) Technology Co. Ltd, 215121, Suzhou, China

    Weitao Fan & Xin Zhang

Authors
  1. Weitao Fan
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  2. Honglie Shen
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  3. Chunming Chen
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  4. Yanqi Li
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  5. Shun Wang
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  6. Xin Zhang
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Contributions

Weitao Fan: Conceptualization, experimental investigation, writing;

Honglie Shen: resources, project administration;

Chunming Chen: experimental investigation;

Yanqi Li: software, formal analysis;

Shun Wang: data curation;

Xin Zhang: writing-review and editing.

Corresponding author

Correspondence to Honglie Shen.

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We declare that we have no financial and personal relationships with other people or organizations that can inappropriately influence our work, there is no professional or other personal interest of any nature or kind in any product, service and/or company that could be construed as influencing the position presented in, or the review of, the manuscript entitled.

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Fan, W., Shen, H., Chen, C. et al. Texturization of Diamond Wire Sawn Mc-silicon by Acid Vapor Etching Followed by Acid Solution Post-treatment. Silicon 14, 4831–4838 (2022). https://doi.org/10.1007/s12633-021-01272-4

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  • DOI: https://doi.org/10.1007/s12633-021-01272-4

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