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Effect of Silicon Carbide Nanoparticles Addition on Structural and Dielectric Characteristics of PVA/CuO Nanostructures for Electronics Devices

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Abstract

This paper aims to improve the dielectric properties of PVA/CuO-SiC nanocomposites to be useful in various electronics devices. The work includes preparation of PVA films and CuO-SiC NPs doped PVA by using casting method. The structural characteristics of PVA/CuO-SiC nanocomposites were tested which included FTIR and optical microscope. The dielectric properties were studied by using LCR meter at frequency range from 100 Hz to 5 MHz. The results of structural characteristics of PVA/CuO-SiC nanocomposites indicated that no chemical interactions between PVA and CuO-SiC NPs. Also, there are high distribution of CuO-SiC NPs in the PVA matrix. The experimental results of dielectric properties showed that increase in dielectric parameters of PVA with the increase in CuO-SiC NPs content. The dielectric parameters of PVA/CuO-SiC nanocomposites were changed with the increase in frequency. Finally, the structural and dielectric properties indicated to the PVA/CuO-SiC nanocomposites can be used in various electronics applications with lightweight, flexible and high corrosion resistance.

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acknowledgment to University of Babylon.

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Noor Al-Huda Al-Aaraji, Ahmed Hashim, Aseel Hadi, Hayder M. Abduljalil.

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Correspondence to Ahmed Hashim.

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Al-Aaraji, N.AH., Hashim, A., Hadi, A. et al. Effect of Silicon Carbide Nanoparticles Addition on Structural and Dielectric Characteristics of PVA/CuO Nanostructures for Electronics Devices. Silicon 14, 4699–4705 (2022). https://doi.org/10.1007/s12633-021-01265-3

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