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Annealing Temperature Effect on Bismuth Induced Crystallization of Hydrogenated Amorphous Silicon Thin Films

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Abstract

In this work, we emphasis on the Bismuth induced crystallization of hydrogenated amorphous silicon (a-Si) thin films. 50 nm of bismuth thin films are deposited by vapor deposition on Silicon substrates. Then, bismuth covered Si substrates are coated with 100 nm thin film of a-Si: H elaborated at fixed growth conditions by plasma enhanced chemical vapor deposition. Annealing experiments were performed by IR thermal processing under N2 atmosphere at temperature ranging from 300 to 500 °C. The effect of annealing temperature on Bismuth induced crystallization of amorphous silicon has been evaluated in terms of crystalline modes and fractions, preferential orientations, average surface roughness and atom distributions. Using X-ray diffraction, atomic force and scanning electron microcopies as well as Raman spectroscopy, the correlation between crystalline fraction and the electrical conductivity as well as X-ray photoelectron spectrometry has been made.

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Acknowledgments

This work was supported by the Ministry of Higher Education and Scientific Research of Tunisia.

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  1. Faculté des sciences de Tunis, Université Tunis El Manar, 2092, Tunis, Tunisia

    Meriem Zouini

  2. LANSER, Laboratoire de nanomatériaux et des systèmes pour les énergies renouvelables, Centre de Recherches et des Technologies de l’Energie, Technopole Borj-Cedria, BP.95, 2050, Hammam Lif, Tunisia

    Meriem Zouini, Rachid Ouertani & Wissem Dimassi

  3. Laboratoire de Nanomatériaux, Nanotechnologie et Energie (L2NE), Faculté des Sciences de Tunis, Université de Tunis El Manar, 2092, Tunis, Tunisia

    Mosbah Amlouk

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Meriem Zouini, Rachid Ouertani, Mosbah Amlouk, Wissem Dimassi.

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Zouini, M., Ouertani, R., Amlouk, M. et al. Annealing Temperature Effect on Bismuth Induced Crystallization of Hydrogenated Amorphous Silicon Thin Films. Silicon 14, 2115–2125 (2022). https://doi.org/10.1007/s12633-021-01005-7

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  • DOI: https://doi.org/10.1007/s12633-021-01005-7

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