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Response of Mechanical Ramp Type of Semiconductor Magneto-Rotator Medium with Variable Thermal Conductivity during Photo-Excitation Microelement Processes

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Abstract

The effect of external magnetic field during microelement processes is used to discuss the excited semiconductor medium in generalized thermoelasticity theory. The thermal conductivity which depends on the temperature is investigated in the context of the photothermal theory to obtain the main variables for a rotator elastic semiconductor medium. In this case the thermal conductivity is variable. The elastic-plasma-thermal waves in two-dimension (2D) deformation have been constructed. Fourier and Laplace integral transformations are used to solve the main governing equations under the effect of microtemperature vector field. Analytical solutions of the main physical field quantities are obtained under these transformations to get the solutions in the physical domain. The mechanical ramp type condition and some other thermal-elastic-plasma conditions are applied on the outer free surface of the medium. To obtain complete solutions for the basic physical quantities, numerical inversion methods of Fourier and Laplace transformations are used in space-time physical domain. Some comparisons are made for some several parameters that they represent graphically and discussed.

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Authors and Affiliations

  1. Department of Mathematics, Faculty of Science, Zagazig University, P.O. Box44519, Zagazig, Egypt

    Kh. Lotfy

  2. Department of Mathematics, Faculty of Science, Taibah University, Madinah, Saudi Arabia

    Kh. Lotfy

  3. Arab Academy for Science, Technology and Maritime Transport, P.O. Box 1029, Alexandria, Egypt

    A. A. El-Bary

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  1. Kh. Lotfy
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  2. A. A. El-Bary
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Correspondence to Kh. Lotfy.

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Lotfy, K., El-Bary, A.A. Response of Mechanical Ramp Type of Semiconductor Magneto-Rotator Medium with Variable Thermal Conductivity during Photo-Excitation Microelement Processes. Silicon 13, 4653–4667 (2021). https://doi.org/10.1007/s12633-020-00720-x

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  • DOI: https://doi.org/10.1007/s12633-020-00720-x

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