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Analytical Modeling of Surrounding Gate Junctionless MOSFET Using Finite Differentiation Method

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Abstract

In this paper, a novel two-dimensional analytical model for threshold voltage on Dual Material Surrounding Gate Junctionless MOSFET is proposed. The analytical study is aimed at decomposing the 2-D Poisson Equations into two 1-D equations. This decomposition enables modeling of Dual Material Gates into two individual single gates. For this prospect, the Finite Differentiation Method is applied. The decomposed individual 1-D Poisson models are combined by employing relevant boundary constraints. This, in turn, provides a normal and easy solution for equation related to complex 2-D Poisson. The proposed potential model facilitates expressions of threshold voltage and sub-threshold swing. Finally, the simulation results and the analytical results were compared with the simulations obtained from TCAD which showed significant compatibility. Thus, it is defended that the proposed model illustrates the guidance regarding the designing of Dual Material Surrounding Gate Junctionless MOSFETs.

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Acknowledgements

The authors are grateful to the Management of “Thiagarajar College of Engineering, Madurai” for the support extended to carry out this research work.

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Authors and Affiliations

  1. Department of ECE, K.L.N College of Information Technology, Sivagangai, Tamil Nadu, India

    S. Preethi

  2. Department of ECE, Thiagarajar College of Engineering, Madurai, Tamil Nadu, India

    N. B. Balamurugan

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  1. S. Preethi
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  2. N. B. Balamurugan
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Correspondence to S. Preethi.

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Preethi, S., Balamurugan, N.B. Analytical Modeling of Surrounding Gate Junctionless MOSFET Using Finite Differentiation Method. Silicon 13, 2921–2931 (2021). https://doi.org/10.1007/s12633-020-00653-5

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