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A Numerical Investigation of Heat Suppression in HEMT for Power Electronics Application

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Abstract

In this paper, AlGaN/GaN High Electron Mobility Transistor (HEMT) with stacked passivation (Diamond/SiN) is proposed and investigated. The implementation of stacked passivation in HEMT has been shown to be effective in suppressing self-heating effect. Under the gate-terminal, the peak channel temperature of HEMT with stacked passivation is 384 K, whereas it is 393 K for conventional HEMT. The reduction of channel temperature in the proposed device is attributed to good heat-spreading via diamond. The thermal resistance (RTH) is extracted and it is found that RTH of proposed HEMT is 17% lower than that of the conventional HEMT. The transconductance of the proposed GaN-HEMT is also improved by 12%. Furthermore, the maximum drain current of 800 mA/mm at VGS = 0 V and VDS = 5 V is obtained for the proposed HEMT with a gate length of 0.25 μm. The proposed device is considered as one of the most attractive candidates for future high frequency and high-power applications over a wide range of operating temperatures.

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Acknowledgements

This work is supported by Defence Research and Development Organization, India (Grant No. ERIP/ER/DGMED&CoS/990616501/M/01/1646).

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Authors and Affiliations

  1. Karunya Institute of Technology and Sciences, Coimbatore, India

    L. Arivazhagan, D. Nirmal, P. Pavan Kumar Reddy & D. Godfrey

  2. SNS College of Technology College in Coimbatore, Coimbatore, India

    J. Ajayan

  3. Jyothi Engineering College, Cheruthuruthy, Thrissur, India

    P. Prajoon

  4. Indian Institute of Technology, Guwahati, India

    Ashok Ray

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  1. L. Arivazhagan
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  2. D. Nirmal
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  3. P. Pavan Kumar Reddy
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Correspondence to D. Nirmal.

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Arivazhagan, L., Nirmal, D., Reddy, P.P.K. et al. A Numerical Investigation of Heat Suppression in HEMT for Power Electronics Application. Silicon 13, 3039–3046 (2021). https://doi.org/10.1007/s12633-020-00647-3

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  • DOI: https://doi.org/10.1007/s12633-020-00647-3

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