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Design and Optimization of LNA Amplifier Based on HEMT GaN for X-Band Wireless-Communication and IoT Applications

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Abstract

Recently, the technology has evolved towards artificial intelligence world which include IoT (Internet of Things) and IoE (Internet of Everything) as communication between machines or between devices is possible. The development of these systems today requires electronic components capable of generating higher power and frequency levels, which is why new technologies have emerged to meet these needs, GaN HEMT technology. It has attracted a lot of attention for microwave power and high temperature applications. More recently, this technology has become a great interest to the international scientific community for the realization of low noise amplifiers which are the main components of wireless communication systems. In this paper, we modeled an LNA amplifier based on HEMT GaN transistors. This amplifier is unconditionally stable in the X-band (8–12) GHz with a gain of 38 dB, a noise factor does not exceed 2.4 dB and lower input and output reflection coefficients (S11, S22). at -14 dB and − 8 dB respectively. The designed amplifier can be integrated into radar systems, space communications systems and civilian-military radiolocation systems.

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References

  1. Colinge J-P, Colinge CA (2002) Physics of semiconductor devices. ISBN 0-306-47622-3, Kluwer Academic Publishers, Berlin

  2. Metev SM, Veiko VP, Laser Assisted Microtechnology, 2nd edn., Osgood RM Jr., (ed) Berlin: Springer-Verlag, 1998

  3. Breckling J (ed) (1989) The analysis of directional time series: Applications to wind speed and direction, ser. lecture notes in statistics, vol 61. Springer, Berlin

  4. Ando Y, Okamoto Y, Miyamoto H, Hayama N, Nakayama T, Kasahara K, Kuzuhara M (2001) A110-W AlGaN/GaN heterojunction PET on thinned sapphire substrate. IEDM Technical Digest, Washington, DC, pp 381–384

    Google Scholar 

  5. Xiang H, Dora Y, Chini A, Heikman S, Keller S, Mishra UK (2004) IEEE Electron Device Lett 25:161

    Article  Google Scholar 

  6. Akita A, Kishimoto S, Mizutani T (2001) IEEE Electron Device Lett 22:376

    Article  CAS  Google Scholar 

  7. Campbell C, Lee C, Williams V, Kao MY, Tserng HQ, Saunier P, Balisteri T (2009) A wideband power amplifier MMIC utilizing GaN on SiC HEMT technology. IEEE J Solid State Circ 44(10):2640–2647

    Article  Google Scholar 

  8. Yu X, Sun H, Xu Y, Hong W (2016) C-band 60 W GaN power amplifier MMIC designed with harmonic tuned approach. Electron Lett 52(3):219–221

    Article  CAS  Google Scholar 

  9. Reveyrand T, Ciccognani W, Ghione G, Jardel O, Limiti E, Serino A, Camarchia V, Cappelluti F, Quere R (2010) GaN transistor characterization and modeling activities performed within the frame of the KorriGaN project. Int J Microw Wirel Technol 2(1):51–61

    Article  Google Scholar 

  10. Ciccognani W, Limiti E, Longhi PE, Mitrano C, Nanni A, Peroni M (2010) An ultra-broadband robust LNA for defence applications in AlGaN/GaN technology. In: 2010 IEEE MTT-S International Microwave Symposium, pp 493–496

  11. Limiti E, Ciccognani W, Cipriani E, Colangeli S, Colantonio P, Palomba M, Florian C, Pirola M, Ayllon N (2015) T/R modules front-end integration in GaN technology,” in 2015 IEEE 16th Annual Wireless and Microwave Technology Conference (WAMICON), pp 1–6

  12. Colangeli S, Bentini A, Ciccognani W, Limiti E, Nanni A (Oct 2013) GaN based robust low-noise amplifiers. IEEE Trans Electron Devices 60(10):3238–3248

  13. Ismail A, Abidi AA (2004) A 3–10-GHz low-noise amplifier with wideband LC-ladder matching network. Solid State Circ IEEE J 39(12):2269–2277

  14. Lin Y-S, Chen C-Z, Yang H-Y, Chen C-C, Lee JH, Huang G-W, Shey-Shi Lu (2010) Analysis and design of a CMOS UWB LNA with dual- RLC -branch wideband input matching network. microwave theory and techniques. IEEE Trans 58(2):287–296

  15. Chen H-K, Lin Y-S et Shey-Shi Lu (2010) Analysis and design of a 1.6-28-GHz compact wideband LNA in 90-nm CMOS using a pi-match input network. microwave theory and techniques. IEEE Trans 58(8):2092–2104

  16. Fukui H (1979) Optimal noise figure of microwave GaAs MESFET’s. .  Electron Devices IEEE Trans 26(7):1032–1037

    Article  Google Scholar 

  17. Moujahed Gassoumi A, Helali M, Gassoumi C, Gaquière H, Maaref (2018) High frequency analysis and small-signal modeling of AlGaN/GaN HEMTs with Si02/SiN passivation. Silicon, pp 1–6

  18. Jaemin S, Taejun Y, Jichai J (2013) Design of low power CMOS ultra wide band low noise amplifier using noise canceling technique. Microelectron J 44(9):821–826

    Article  Google Scholar 

  19. Meng-Ting H, Yi-Cheng C, Yu-Zhang H (2013) Design of low power UWB LNA based on common source topology with current-reused technique. Microelectron J 44(12):1223–1230

    Article  Google Scholar 

  20. Chun-Chieh C, Yen-Chun W (2013) 3.1–10.6 GHz ultra-wideband LNA design using dual-resonant broadband matching technique AEU. Int J Electron Commun 67(6):500–503

    Article  Google Scholar 

  21. Teyssandier C (2013) Cryogenic 8–18 GHz MMIC LNA using GaAs pHEMT. In: IEEE Asia-Pacific Microwave Conference (APMC) Proceedings, pp 261–263

  22. Kim B, Gao W (2016) X-band Robust current-shared GaN low noise amplifier for receiver applications. IEEE CSICS Digest, Austin Tx, Oct. 23, 2016

  23. M. Vittori, S. Colangeli, W. Ciccognani, A. Salvucci, G. Polli, Limiti E (2017) High performance X-band LNAs using a 0.25 µm GaN technology. 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), pp 157–160

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Authors and Affiliations

  1. Laboratoire de Micro-Optoélectronique et Nanostructures (LMON), Faculté des Sciences, Université de Monastir, Avenue de l’environnement, Monastir, 5019, Tunisie

    Abdelhamid Helali, Moujahed Gassoumi & Hassen Maaref

  2. Department of Physics, College of Science, Qassim University, Buryadh, 51452, Saudi Arabia

    Malek Gassoumi

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  1. Abdelhamid Helali
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  2. Moujahed Gassoumi
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  3. Malek Gassoumi
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  4. Hassen Maaref
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Correspondence to Abdelhamid Helali or Malek Gassoumi.

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Helali, A., Gassoumi, M., Gassoumi, M. et al. Design and Optimization of LNA Amplifier Based on HEMT GaN for X-Band Wireless-Communication and IoT Applications. Silicon 13, 2645–2653 (2021). https://doi.org/10.1007/s12633-020-00626-8

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  • DOI: https://doi.org/10.1007/s12633-020-00626-8

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