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Modeling, Simulation and Analysis of Surface Potential and Threshold Voltage: Application to High-K Material HfO2 Based FinFET

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Abstract

In this study, an analytical model for surface potential and threshold voltage for undoped (or lightly) doped tri-gate Fin Field Effect Transistor (TG-FinFET) is proposed and validated using transistor computer aided design (TCAD) simulation. The threshold voltage with channel length 50 nm was compared with the published experimental results achieved from tri-gate FinFET. Separate solutions of 2D Poisson’s equation were obtained for both symmetric and asymmetric double gate FinFET and combined using the perimeter-weighted sum approach to achieve the surface potential for TG-FinFET. The inversion charge model was used to find the threshold voltage of the above mentioned device. The results of the model were obtained for different channel lengths, fin widths and fin heights on the silicon substrate. A comparative study of hafnium dioxide (HfO2) and silicon dioxide (SiO2) for the same oxide thickness was delineated to depict the influence of the high dielectric material on the model of FinFET. As anticipated, the oxide thickness of HfO2 is greater than SiO2 to maintain the same surface potential. The result of the analytical model was well agreed with the TCAD simulation outcome. Hence, it can be considered as a promising model in device technology.

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Acknowledgments

The authors would like to thank and highly indebted to TCAD Laboratory, National Institute of Technology, Silchar, India for supporting this technical work.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Mizoram University (A Central University), Aizawl, 796 004, India

    Suparna Panchanan, Reshmi Maity & N. P. Maity

  2. Department of Electronics and Communication Engineering, Regent Education and Research Foundation, Kolkata, 700 121, India

    Suparna Panchanan

  3. Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, Assam, 788 010, India

    S. Baishya

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  1. Suparna Panchanan
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  2. Reshmi Maity
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  3. S. Baishya
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  4. N. P. Maity
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Correspondence to N. P. Maity.

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Panchanan, S., Maity, R., Baishya, S. et al. Modeling, Simulation and Analysis of Surface Potential and Threshold Voltage: Application to High-K Material HfO2 Based FinFET. Silicon 13, 3271–3289 (2021). https://doi.org/10.1007/s12633-020-00607-x

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