Skip to main content

Advertisement

SpringerLink
Log in

A Novel Approach to White Light Radiation from Silicon Based Tunnel Junction LEDs

  • Original Paper
  • Published:
Silicon Aims and scope Submit manuscript

Abstract

This paper examines another kind of white light radiating half and half diode, made out of a light producing GaN/InGaN LED and a layer of semiconductor nanocrystals for shading transformation. In contrast to standard white LEDs, the gadget is arranged to accomplish high shading transformation effectiveness by means of non-radiative vitality move from the essential LED to the nanocrystals. Driven structures with sub-10 nm partition the between quantum well and the surface and designed standard brilliant LEDs are considered for the half and half gadgets, which require closeness of the nanocrystals to the quantum well. The advancement of the cross breed diode creation counting process methods for GaN LED and joining of the nanocrystals are given the accentuation on the distinctions with standard LED preparing. Results and investigation of optical and electrical portrayal counting photoluminescence (PL), smaller scale PL, time-settled PL and electroluminescence (EL) together with current-voltage qualities are exhibited to assess the gadget execution. An away form of non-radiative vitality move was found in the transporter elements of both the LED and the nanocrystals when the quantum well – nanocrystals partition was under 10 nm. Examination of the outcomes shows that in request to accomplish adequate for the white LED shading transformation, better surface passivation and nanocrystals with shorter exciton lifetimes and more vulnerable auger recombination are required.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Nakamura S, Senoh M, Iwasa N, Nagahama S (1995) High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes. Appl Phys Lett 67:1868–1870

    Article  CAS  Google Scholar 

  2. Lee CT, Yang UZ, Lee CS, Chen PS (2006) White light emission of monolithic carbon-implanted InGaN–GaN light-emitting diodes. IEEE Photon Technol Lett 18:2029–2031

    Article  CAS  Google Scholar 

  3. Chao C-L et al (2011) Reduction of efficiency droop in InGaN light-emitting diode grown on self-separated freestanding GaN substrates. IEEEPhoton. Technol. Lett. 23(12):798–800

    Article  CAS  Google Scholar 

  4. Chang SJ, Lin WH, Yu CT (2015) GaN-based multiquantum well light-emitting diodes with tunnel-junction-cascaded active regions. IEEE Electron Dev Lett 36:366–368

    Article  CAS  Google Scholar 

  5. Lin WH, Chang SJ, Chen WS (2016) GaN-based dual-color light-emitting diodes with a hybrid tunnel junction structure. IEEE/OSA J Disp Technol 12:165–170

    CAS  Google Scholar 

  6. Sheu JK, Chang SJ, Kuo CH, Su YK, Wu LW, Lin YC, Tsai JM, Wu RK, Chi GC (2003) White light emission from near UV InGaN/GaN LED chip precoated with blue/green/red phosphors. IEEE Photon Technol Lett 15:18–20

    Article  Google Scholar 

  7. Chang S-J, Lu L, Lin Y-Y, Li S (Nov. 2013) GaN-based light-emitting diodes with AlGaN strain compensation buffer layer. J Display Technol 9(11):910–914

    Article  CAS  Google Scholar 

  8. Tsai M-C, Leung B, Hsu T-C, Kuo Y-K (2013) Low resistivity GaN-based polarization-induced tunnel junctions. J. Lightw. Technol. 31(22):3575–3581

    Article  CAS  Google Scholar 

  9. Krames MR, Shchekin OB, Mueller-Mach R, Mueller GO, Zhou L, Harbers G, Craford MG (2007) Status and future of high-power light emitting diodes for solid-state lighting. IEEE/OSA J. Disp. Technol. 3:160–175

    Article  CAS  Google Scholar 

  10. Crawford MH (2009) LEDs for solid-state lighting: performance challenges and recent advances. IEEE J Sel Top Quan Electron 15:1028–1040

    Article  CAS  Google Scholar 

  11. S. J. Chang, N. M. Lin, and S. C. Shei, "GaN-based power flip-chip LEDs with SILAR and hydrothermal ZnO nanorods", IEEE J Sel Top Quan Electron, vol. 21, Art. 9100405, 2015

  12. Shen CF, Chang SJ, Chen WS, Ko TK, Kuo CT, Shei SC (2007) Nitride-based high-power flip-chip LED with double-side patterned sapphire substrate. IEEE Photon Technol Lett 19:780–782

    Article  CAS  Google Scholar 

  13. Y. Y. Zhang and Y. A. Yin, “Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer,” Appl. Phys. Lett., vol. 99, Art. 221103, 2011

  14. Chichibu S, Azuhata T, Sota T, Nakamura S (1996) Spontaneous emission of localized excitons in InGaN single and multiquantum well structures. Appl Phys Lett 92:4188–4190

    Article  Google Scholar 

  15. Schubert MF, Chajed S, Kim JK, Schubert EF, Koleske DD, Crawford MH, Lee SR, Fischer AJ, Thaler G, Banas MA (2007) Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes. Appl Phys Lett 91:23114–1–23114-3

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Computer Science and Engineering, KMEA Engineering College, Ernakulam, Kerala, India

    Bibin Vincent

  2. Department of Computer Science and Engineering, Jyothi Engineering College, Thrissur, Kerala, India

    S U Aswathy

  3. Department of Electrical and Electronics Engineering, Mangalam College of Engineering, Kottayam, Kerala, India

    T D Subash

  4. Department of Electronics and Communication Engineering, R.M.K. Engineering College, Chennai, Tamilnadu, India

    T D Subha

Authors
  1. Bibin Vincent
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. S U Aswathy
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. T D Subash
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. T D Subha
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Bibin Vincent.

Additional information

Publisher’s Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Vincent, B., Aswathy, S.U., Subash, T.D. et al. A Novel Approach to White Light Radiation from Silicon Based Tunnel Junction LEDs. Silicon 13, 2689–2700 (2021). https://doi.org/10.1007/s12633-020-00599-8

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s12633-020-00599-8

Keywords

Search

Navigation