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Improvement in Sensing Characteristics of Silicon Microstructure based MEMS Capacitive Sensor for Automotive Applications

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Abstract

Capacitive pressure sensors have become a reasonable choice due to their low power consumption, energy efficiency, and robustness. In this paper, a thorough investigation of MEMS based capacitive pressure sensor with square diaphragm has been carried out. A comparative study of the diaphragm displacement and capacitance as a function of external pressure and temperature has been done by using various diaphragm materials such as Si, Poly Si, Si3N4 and 3C-SiC. The performance analysis of the device was envisaged with and without packaging stress by measuring various parameters. The simulation results are emphasized on the change in capacitance at different die bonding temperatures. Temperature dependence of capacitance at varying ambient pressure has also been realized. The present work will facilitate researchers for choosing a selective material for automotive applications.

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Acknowledgements

The authors feel indebted and would like to express deep gratitude towards the Department of Electrical Engineering, Indian Institute of Technology Patna for assisting us with the relevant facilities throughout the research work.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Technology Patna, Patna, 800005, Bihar, India

    Shreya Suman

  2. Sensors and Optoelectronics Research Group (SORG), Department of Electrical Engineering, Indian Institute of Technology Patna, Bihta, 801103, Bihar, India

    Deepak Punetha & Saurabh Kumar Pandey

Authors
  1. Shreya Suman
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  2. Deepak Punetha
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  3. Saurabh Kumar Pandey
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Correspondence to Deepak Punetha.

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Suman, S., Punetha, D. & Pandey, S.K. Improvement in Sensing Characteristics of Silicon Microstructure based MEMS Capacitive Sensor for Automotive Applications. Silicon 13, 1475–1483 (2021). https://doi.org/10.1007/s12633-020-00540-z

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  • DOI: https://doi.org/10.1007/s12633-020-00540-z

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