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Effect of Silicon Wafer Resistivity on Morphology and Wettability of Silicon Nanowires Arrays

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Abstract

Herein, we prepare vertical and single crystalline silicon nanowires (SiNWs) via a one-step metal-assisted chemical etching method in aqueous NH4HF2/AgNO3 solution. The effects of silicon substrate resistivity and concentrations of NH4HF2 and AgNO3 on the etching process were examined. Two properties were studied, the morphology and the wettability of etched layers. The morphology of the silicon nanowire (SiNW) layers was investigated by scanning electron microscopy (SEM) while the wettability was studied by contact angle measurement system. It was established that the morphology is strongly influenced by etching parameters and their wettability changes from superhydrophilic to hydrophobic.

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Acknowledgments

The authors gratefully acknowledge the financial support from General Direction of Scientific Research and of Technological Development of Algeria (DGRSDT/MESRS).

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Authors and Affiliations

  1. Research Center in Semiconductors Technology for Energetic (CRTSE), 2, Bd. Frantz Fanon, B.P. 140 Alger-7 Merveilles, Algiers, Algeria

    Sabrina Naama, Toufik Hadjersi & Amina Larabi

  2. University of Science and Technology Houari Boumediene (USTHB), LPT, FGMGP. BP 32, El Alia, Bab Ezzouar, 16111, Algiers, Algeria

    Ghania Nezzal

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  1. Sabrina Naama
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  2. Toufik Hadjersi
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  3. Amina Larabi
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  4. Ghania Nezzal
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Correspondence to Sabrina Naama.

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Naama, S., Hadjersi, T., Larabi, A. et al. Effect of Silicon Wafer Resistivity on Morphology and Wettability of Silicon Nanowires Arrays. Silicon 13, 893–899 (2021). https://doi.org/10.1007/s12633-020-00511-4

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  • DOI: https://doi.org/10.1007/s12633-020-00511-4

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