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High-Temperature Stability of Titanium Boride Reinforced Alumina-Silicon Carbide Based Composite

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Abstract

Alumina and Silicon Carbide based composites are routinely used in mechanical, automobile, ceramic and aerospace industries with numerous reinforcements. Reinforcements increase the physical, chemical, mechanical, thermal and tribological properties and make Al2O3-SiC suitable for a specific application. In this research, Titanium Boride powder of average size 95 nm reinforced into Al2O3-SiC nano-composite to enhance the thermal stability. The Al2O3-SiC nano-composite with 5, 10, 15 and 20 vol.% TiB2 were fabricated through pressureless sintering under an argon atmosphere at 1600 °C. The high-temperature thermal stability of Al2O3-SiC-TiB2 nano-composite was analyzed through the thermo-gravimetric analyzer (TG/DTA) with a warming rate of 10 °C/min and compared with Al2O3-SiC. A strong endothermic peak recorded at 1288 °C and excellent thermal stability recorded up to 1488 °C. 20% Titanium Boride added Alumina-Silicon Carbide nano-composite exhibited 6% reduced mass change and 20% increase in thermal stability at 1488 °C. The microstructure of the Al2O3-SiC-20 vol.% TiB2 was studied using XRD and SEM equipped with an EDX analysis facility. The SEM image displayed the surface morphology of the composite and XRD, EDX analysis exhibited the presence of Titanium particles with an average size of 95 nm.

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Acknowledgments

The authors are thankful to Periyar University Salem, Tamilnadu, and NETZSCH Technologies India Private Limited Mogappair, Chennai, for providing instrument facilities.

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  1. Department of Aeronautical Engineering, MVJ College of Engineering (Autonomous), Bangalore, Karnataka, India

    Tamilselvam Nallusamy

  2. Department of Mechanical Engineering, University College of Engineering (A Constituent College of Anna University-Chennai), Kancheepuram, Tamilnadu, India

    Vijayakumar S

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Nallusamy, T., S, V. High-Temperature Stability of Titanium Boride Reinforced Alumina-Silicon Carbide Based Composite. Silicon 13, 1087–1095 (2021). https://doi.org/10.1007/s12633-020-00498-y

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