Abstract
In the present work, the n + source pocket PIN gate all around tunnel FET (PNIN-GAA-TFET) based gas sensor has been proposed. Various analyte gases such as hexane, methanol, isopropanol, dichloromethane, and chloroform have been examined for their sensitivity and stability. The sensing of various analyte gases relies on the fact of work function modulation of the conducting polymer (used as gate) on the exposure of the gas vapors. Subsequently, the work function modulation of the conducting polymer gate alters the characteristics of the device that is calibrated for examining the sensitivity of the proposed gas sensor. The shift in the subthreshold current after the exposure of the analyte gas has been used as a sensing metric. Moreover, the influence of ambient temperature, conduction path, i.e., the channel radius and the oxide thickness of gate on the sensitivity and the characteristics of the proposed gas sensors have also been examined. The employment of the proposed PNIN-GAA-TFET based gas sensor may fulfill the perpetual demands of chemical and pharmaceutical industries, biomedical diagnostics, environmental monitoring and automotive industries by offering a low power, highly sensitive and reliable analyte gas detection.
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Acknowledgments
The authors gratefully acknowledge the support from Microelectronics Research Laboratory, Delhi Technological University to carry out the work. The author, Dr. Jaya Madan thanks to Dr. Rajnish Sharma from Chitkara University for his continuous support during the preparation of the manuscript.
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Madan, J., Pandey, R. & Chaujar, R. Conducting Polymer Based Gas Sensor Using PNIN- Gate All Around - Tunnel FET. Silicon 12, 2947–2955 (2020). https://doi.org/10.1007/s12633-020-00394-5
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DOI: https://doi.org/10.1007/s12633-020-00394-5