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Stereometric Analysis of Effects of Heat Stressing on Micromorphology of Si Single Crystals

  • Dallaev RashidEmail author
  • Sebastian Stach
  • Ştefan Ţălu
  • Dinara Sobola
  • Alia Méndez-Albores
  • Gabriel Trejo Córdova
  • Lubomír Grmela
Original Paper
  • 39 Downloads

Abstract

The purpose of this work is study of silicon single crystal wafer thermal stability in correlation with three-dimensional (3D) surface characterization using atomic force microscopy (AFM). The samples were heated up to 500 °C for the period of 2 and 4 h. Then the surfaces of wafers were processed by ion beam. The difference in surface structure of processed and reference samples was investigated. Structural and compositional studies are provided by X-ray photoelectron spectroscopy. Stereometric analysis was carried out on the basis of AFM-data, for stressed and unstressed samples. The results of stereometric analysis show the correlation of statistical characteristics of surface topography and structure of surface and near-surface area. Characterization techniques in combination with data processing methodology are essential for description of the surface condition. All the extracted topographic parameters and texture features have demonstrated a deeper analysis that can be used for new micro-topography models.

Keywords

Atomic force microscopy Si single crystal wafers Stereometric analysis Topography X-ray photoelectron spectroscopy 

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Notes

Acknowledgements

Research described in the paper was financially supported by the Ministry of Education, Youth and Sports of the Czech Republic under the project CEITEC 2020 (LQ1601), by the National Sustainability Program under grant LO1401 and by Internal Grant Agency of Brno University of Technology, grant No. FEKT-S-17-4626. For the research, infrastructure of the SIX Center was used. Part of the work was carried out with the support of CEITEC Nano Research Infrastructure (ID LM2015041, MEYS CR, 2016–2019), CEITEC Brno University of Technology.

Compliance with Ethical Standards

Conflicts of Interest

The authors declare that they have no competing interests.

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Copyright information

© Springer Nature B.V. 2019

Authors and Affiliations

  1. 1.Faculty of Electrical Engineering and Communication, Physics DepartmentBrno University of TechnologyBrnoCzech Republic
  2. 2.Faculty of Computer Science and Materials Science, Institute of Informatics, Department of Biomedical Computer SystemsUniversity of SilesiaSosnowiecPoland
  3. 3.The Directorate of Research, Development and Innovation Management (DMCDI)The Technical University of Cluj-NapocaCluj-NapocaRomania
  4. 4.Centro de Química-ICUAP Benemérita Universidad Autónoma de PueblaPueblaMexico
  5. 5.Center of Research and Technological Development in Electrochemistry (CIDETEQ)QuerétaroMexico

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