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Fabrication of a New Hybrid Coronene/n-Si Structure by Using Spin Coating Technique and its Photoresponse and Admittance Spectroscopy Studies

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Abstract

Coronene/n-Si Schottky structure has been fabricated by Coronene thin film deposited on n-Si substrate using the spin coating technique. The current-voltage (I-V) characteristics of the diode have been evaluated under various illumination intensities to determine photodiode behavior. Photovoltaic parameters of the fabricated diode have been calculated at different illumination intensities. The Coronene/n-Si diode presents a photovoltaic status with a maximum short-circuit current (Isc) of 13.1 μA and open circuit voltage (Voc) of 0.16 V under 100 mW/cm2 illumination intensity. The recombination process of the Coronene/n-Si diode shows the existence of bimolecular recombination mechanism associated with the trap levels in the band gap. Also, the series resistance and interface state density distribution of the photodiode have been estimated by capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics at various frequencies. The experimental results indicated that the Al/Coronene/n-Si diode can be used as a photodiode in optoelectronic and photovoltaic applications.

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Acknowledgments

This study is supported by the FEN-BAP-A-200515-65 project number of Giresun University BAP office.

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, Selçuk University, Konya, Turkey

    Ü. Akın & Ö. F. Yüksel

  2. Vocational High School of Health Services, Giresun University, Giresun, Turkey

    E. Taşcı

  3. Department of Energy Systems Engineering, Faculty of Engineering, Giresun University, Giresun, Turkey

    N. Tuğluoğlu

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  1. Ü. Akın
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  2. Ö. F. Yüksel
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  3. E. Taşcı
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  4. N. Tuğluoğlu
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Correspondence to N. Tuğluoğlu.

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Akın, Ü., Yüksel, Ö.F., Taşcı, E. et al. Fabrication of a New Hybrid Coronene/n-Si Structure by Using Spin Coating Technique and its Photoresponse and Admittance Spectroscopy Studies. Silicon 12, 1399–1405 (2020). https://doi.org/10.1007/s12633-019-00233-2

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  • DOI: https://doi.org/10.1007/s12633-019-00233-2

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