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Electrical and Photoresponse Properties of Al/p-Si/Y1-xSrxMnO3/Al Heterojunction Photodiodes

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Abstract

The electrical and photoresponse properties of Al/p-Si/Y1-xSrxMnO3/Al diodes were investigated by using current-voltage and transient photocurrent measurements. The average ideality factor and barrier height has been calculated as 4.2568 and 0.613 eV respectively. The calculated ideality factor for Al/p-Si/Y1-xSrxMnO3/Al diodes is higher than unity because of the interface states, native oxide layer and series resistance. Also, diodes have exhibited property of photosensitivity. These indicated that the fabrication of diodes can be used optoelectronic device applications.

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Author notes

  1. Denizhan Ozmen and Mesut Yalcin contributed equally to this work.

Authors and Affiliations

  1. Department of Physics, Faculty of Science, Firat University, 23169, Elazig, Turkey

    Denizhan Ozmen & Fahrettin Yakuphanoglu

  2. Vocational High School of Health Services, Kilis 7 Aralik University, 79000, Kilis, Turkey

    Mesut Yalcin

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  1. Denizhan Ozmen
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  2. Mesut Yalcin
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  3. Fahrettin Yakuphanoglu
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Correspondence to Mesut Yalcin.

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Ozmen, D., Yalcin, M. & Yakuphanoglu, F. Electrical and Photoresponse Properties of Al/p-Si/Y1-xSrxMnO3/Al Heterojunction Photodiodes. Silicon 12, 883–891 (2020). https://doi.org/10.1007/s12633-019-00177-7

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