This work reports a platinum silicide (PtSi) Schottky Barrier (SB) p-MOSFET (SB p-MOSFET) using charge plasma concept for low power applications. Here, we use two different materials to form source of the device. The source consists of two parts as primary source and extension. To consist source, PtSi and for extension, platinum metal is used. The proposed device is named as charge plasma (CP) SB p-MOSFET (CP SB p-MOSFET). The use of platinum extension induces the hole plasma near the source end. As a result, increased band bending reduces the SB width. This enhances the DC performance of the device. In addition, we have compared the DC and analog/RF performance of both the proposed device and the conventional SB p-MOSFET. It is observed that the proposed device exhibits improvement in on-state current (Ion), on- to off current ratio (ION/IOFF), transconductance (gm), cut-off frequency (ft), product of gain and bandwidth (fa) and transconductance generation factor (gm/Ids). We also optimized the performance of the device by modulating the work function and length of metal employed for extension. Moreover, the proposed device eliminated the doping, lowers the thermal budget requirement and unaffected from fluctuations due to randomly distributed dopant.
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Kale, S. Performance Improvement and Analysis of PtSi Schottky Barrier p-MOSFET Based on Charge Plasma Concept for Low Power Applications. Silicon 12, 479–485 (2020). https://doi.org/10.1007/s12633-019-00161-1
- Schottky barrier
- Charge plasma
- Platinum silicide
- Random dopant fluctuations