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Study of Structural, Electronic and Vibrational Properties of Porous Silicon with Different Porosity

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A Correction to this article was published on 04 July 2019

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Abstract

In this work, density functional theory (DFT) was utilized to study the influence of the porosity on the structural, electronic and vibrational properties of porous silicon (PS). It is based on the potential plane wave (PP-PW) method within generalized gradient approximation (GGA). Supercell model was used to simulate nanopores structures. The results obtained from the formation energy calculation exhibited that the most stable structure corresponds to the highest porosity (40.62%). Moreover, a direct band gap is calculated for all porosities and enlargement of energy gap with porosity was observed. The obtained IR spectra calculation show a resemblance between 15.62 and 40.62% porosities and 3.12 and 28.12% porosities. In order to confirm the theoretical results, we prepared porous silicon specimens by electrochemical etching of (001) p-type silicon wafer (1–10 Ohm cm resistivity). In addition, the IR spectra of PS layers were measured and compared against the calculated spectra. IR absorbance spectrum obtained for a porosity of 40.62% shows great agreement with the experimental one and confirms that the surface is hydrogenated.

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Change history

  • 04 July 2019

    The original version of the article unfortunately contained an error.

  • 04 July 2019

    The original version of the article unfortunately contained an error.

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Acknowledgements

The authors are grateful to Mr. Mazari Redha from university of Medea for his helpful contribution in informatics assistance.

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Authors and Affiliations

  1. Laboratoire de Physique des Techniques Expérimentales et ses Applications de Médéa LPTEAM, Département Science de la Matière, Faculté des Sciences, Université de Médéa, Médéa, Algeria

    H. Lachenani

  2. Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique (CRTSE), 02 Bd, Frantz Fanon, B.P, 140, Alger, Algeria

    H. Lachenani, A. Larabi & N. Gabouze

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  1. H. Lachenani
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  2. A. Larabi
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  3. N. Gabouze
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Correspondence to A. Larabi.

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Lachenani, H., Larabi, A. & Gabouze, N. Study of Structural, Electronic and Vibrational Properties of Porous Silicon with Different Porosity. Silicon 11, 2505–2515 (2019). https://doi.org/10.1007/s12633-019-00137-1

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