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TFET on Selective Buried Oxide (SELBOX) Substrate with Improved ION/IOFF Ratio and Reduced Ambipolar Current

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Abstract

This paper proposes a new structure for tunnel field effect transistor on a selective buried oxide (SELBOX) substrate. An extensive simulation study and a comparative performance analysis of the key characteristics of the proposed geometry of TFET on SELBOX substrate and the conventional fully depleted silicon-on-insulator (FDSOI) TFETs have been done. It has been found that SELBOX can significantly reduce the OFF current, without affecting the ON current of the device; hence, higher order of ION/IOFF ratio (1010) can be obtained prevailing the advantages of FDSOI TEFTs.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, 788010, Assam, India

    Dhruvajyoti Barah, Ashish Kumar Singh & Brinda Bhowmick

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  1. Dhruvajyoti Barah
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  2. Ashish Kumar Singh
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  3. Brinda Bhowmick
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Correspondence to Dhruvajyoti Barah.

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Barah, D., Singh, A.K. & Bhowmick, B. TFET on Selective Buried Oxide (SELBOX) Substrate with Improved ION/IOFF Ratio and Reduced Ambipolar Current. Silicon 11, 973–981 (2019). https://doi.org/10.1007/s12633-018-9894-0

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  • DOI: https://doi.org/10.1007/s12633-018-9894-0

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