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Pressure Dependence of Mechanical Properties in AlP and AlSb Semiconductors

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Abstract

The effect of pressure on the mechanical properties of zinc-blende AlP and AlSb semiconductors has been investigated using the local empirical pseudo-potential method (EPM). The studied quantities are the elastic constants(cij), bulk modulus (Bu), shear modulus (Sh),Young modulus (Y0), Poisson’s ratio (σ, bond stretching (α, bond binding force (β, internal strain parameter (ζ, linear compressibility (C0) and Cauchy ratio (Ca). All studied quantities are found to be affected with pressure except the internal strain parameter and Poisson’s ratio. The mechanical stability criteria for the materials of interest for pressure up to 120 Kbar are fulfilled. The considered materials can be used in optoelectronic devices. The overall agreement between our results and the available experimental and theoretical data is found to be reasonable good. Our calculated values may serve as a reference, especially for high pressure.

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, Mansoura University, P. O. Box: 35516, Mansoura, Egypt

    E. B. Elkenany, A. R. Degheidy & O. A. Alfrnwani

Authors
  1. E. B. Elkenany
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  2. A. R. Degheidy
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  3. O. A. Alfrnwani
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Correspondence to E. B. Elkenany.

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Elkenany, E.B., Degheidy, A.R. & Alfrnwani, O.A. Pressure Dependence of Mechanical Properties in AlP and AlSb Semiconductors. Silicon 11, 919–924 (2019). https://doi.org/10.1007/s12633-018-9892-2

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  • DOI: https://doi.org/10.1007/s12633-018-9892-2

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