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Silicon

, Volume 11, Issue 2, pp 775–780 | Cite as

Numerical Simulation on the Suppression of Crucible Wall Constraint in Directional Solidification Furnace

  • S. Sanmugavel
  • M. Srinivasan
  • K. Aravinth
  • P. RamasamyEmail author
Original Paper
  • 42 Downloads

Abstract

We carried out a global modelling and transient simulation of bulk multi-crystalline silicon (mc-Si) growth in Directional Solidification (DS) furnace. The temperature distribution and the heat flux have been investigated. The stress and dislocation have been reduced by altering the crucible shape. The stress due to the crucible wall constraint has been reduced. The simulation results show that the maximum value of stress and dislocation density can also be decreased by crucible shape and these input parameters can be implemented in real system to grow a better mc-Si ingot for solar cell applications.

Keywords

Mathematical modelling and simulation DS process Silicon growth 

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Notes

Acknowledgements

This work was supported by the Ministry of New and Renewable Energy (MNRE), the Government of India (Order no: 31/58/2013-2014/PVSE & 15-01-2015).

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Copyright information

© Springer Science+Business Media B.V., part of Springer Nature 2018

Authors and Affiliations

  1. 1.Sri Sivasubramaniya Nadar College of EngineeringChennai –India

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