Abstract
Ti/Au/p-Si diodes with the diameters of 100 and 200 μ m were fabricated by photolithographic technique. Capacitance–voltage (C–V) and conductance–voltage (G/w–V) characteristics of these diodes have been investigated by considering the series resistance (Rs) and interface states (Nss) effects. Experimental results show that the value of C and G/w in per area, with D1 (100 μ m) is lower than that of D2 (200 μ m) in depletion region but this behavior become reverse at accumulation region. Such behavior of C and G/w can be attributed to the special distribution of Nss at metal/semiconductor (M/S) interface, series resistance (Rs) of diode. The interface states density of the devices determined from high-low capacitance methods are presented for comparison. The voltage dependent profile of Rs was obtained for 100 kHz and 1 MHz. The observed anomalous peaks in C–V plots at 100 kHz were attributed to the effects of Rs, Nss and native interfacial layer. Experimental result show that the localizations of Nss at Ti/Au/p-Si interface, Rs and native interfacial layer have significant effects on the C–V and G/w–V characteristics of Ti/Au/p-Si diodes.
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References
Rhoderick EH, Williams RH (1988) Metal semiconductor contacts, 2nd edn. Clarendon Press, Oxford
Nicollian EH, Brews JR (1982) MOS physics and technology. Wiley, New York
Singh A (1985) Solid State Electron 28(3):223
Altindal S, Tataroglu A, Dokme I (2005) Sol Energy Mater Sol Cells 85:345
Osvald J, Burian E (1998) Solid State Electron 42(2):191
Cova P, Singh A (1997) J Appl Phys 82(10):5217
Afandiyeva IM, Dokme I, Altindal S, Bulbul MM, Tataroglu A (2008) Mocroelectronic Engineering 85:247
Cova P, Singh A, Medina A, Masut RA (1988) Solid State Electron 42:477
Raychaudhuri B, Chattopadhyay P (1994) Phys Stat Sol 141(1):K71
Korucu D, Turut A, Turan R, Altindal S (2012) Sci China Phys Mech Astron 55:1. https://doi.org/10.1007/s11433-012-4761-2
Haddara HS, El-Sayed M (1988) Solid State Electron 31(8): 1289
Altindal S, Karadeniz S, Nuhoglu N, Tataroglu A (2003) Solid State Electron 47(10):1847
Turut A, Yalcin N, Saglam M (1992) Solid State Electron 35(1):835
Depas M, Van Meirhaeghe RL, Lafere WH, Cardon F (1994) Solid State Electron 37(3):433
Wang K, Ye M (2009) Solid-State Electron 53(2):234
Bulbul MM, Altindal S, Parlakturk F, Tataroglu A (2011) Surf Interface Anal 43:1561
Karatas S, Turut A (2010) Microelectron Reliab 50(3):351
Nicollian EH, Goetzberger A (1967) Bell System Tech J 46:1055
Korucu D, Altindal Ş, Mammadov TS, Özcelik S. (2008) Optoelectron Adv Mater-RC 2(9):525
Card HC, Rhoderick EH (1971) J Phys D 4:1589
Konofas N, Evangelou EK (2003) Semicond Sci Technol 18:56
Divigalpitiya WMR (1989) Sol Energy Mater 18:253
Castagne R, Vapaille A (1971) Surf Sci 28:157
Hung KK, Cheng YC (1987) J Appl Phys 62:4204
Kelberlan U, Kasing R (1981) Solid State Electron 24:873
Nicollian E, Goetzberger A (1966) Bell Syst Tech J 46:513
Altindal S, Uslu H (2011) J Appl Phys 109(7):074503
Werner J, Ploog K, Queisser HJ (1986) Phys Rew Lett 57:80
Cheung SK, Cheung NW (1986) Apply Phys Lett 49:85
Altindal S, Kanbur H, Yucedag I, Tataroglu A (2008) Microelectron Eng 85(2):1495
Korucu D, Altindal Ş, Mammadov TS, Özçelik S (2009) J Optoelect Res Mat 11(2):192
Korucu D, Türüt A, Altındal Ş (2013) Curr Appl Phys 13:1101
Korucu D, Karataş Ş, Türüt A (2013) Indian J Phys. https://doi.org/10.10007/s12648-013-0294-4
Korucu D, Duman S (2015) Sci Adv Mater 7:1291
Tung RT (1992) Phys Rev B 45:13509
Sullivan JP, Tung RT, Pinto MR, Graham WR (1991) J Appl Phys 70:7403
Song YP, Van Meirhaeghe RL, Laflere WH, Cardon F (1986) Solid State Electron 29:633–638
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Korucu, D., Duman, S. Frequency and Voltage Dependence of Interface States and Series Resistance in Ti/Au/p-Si Diodes with 100 μm and 200 μm Diameter Fabricated by Photolithography. Silicon 11, 1055–1061 (2019). https://doi.org/10.1007/s12633-017-9734-7
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DOI: https://doi.org/10.1007/s12633-017-9734-7