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, Volume 10, Issue 5, pp 2071–2077 | Cite as

Frequency-Dependent Dielectric Parameters of Au/TiO2/n-Si (MIS) Structure

  • A. Büyükbaş Uluşan
  • A. Tataroğlu
Original Paper
  • 55 Downloads

Abstract

In this study, thin film of titanium dioxide (TiO2) was deposited onto n-type silicon substrate by radio frequency (RF) magnetron sputtering system. The admittance (capacitance and conductance) measurements were performed in the frequency range of 500 Hz - 500 kHz and at room temperature. The dielectric parameters such as dielectric constant (ε), loss (ε), loss tangent (tan δ), ac conductivity (σac) and complex modulus (M) of the MIS structure were obtained from these measurements. While the C value decreases with an increase of the frequency, the G increases. The change in C and G with frequency is attributed to the presence interface states. The value of ε and ε decreases with increasing frequency. On the other hand, the value of ac conductivity increases with increasing frequency.

Keywords

MIS structure Admittance measurements Dielectric constant and loss ac conductivity Modulus 

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Notes

Acknowledgements

This work is supported by Gazi University Scientific Research Project (BAP) with the research Project Number 05/2016-15.

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© Springer Science+Business Media B.V., part of Springer Nature 2018

Authors and Affiliations

  1. 1.Department of Physics, Faculty of ScienceGazi UniversityAnkaraTurkey

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