Abstract
In nanometer regime, the variations in process parameters and environment parameters are increased radically which motivate the use of Statistical Static Timing Analysis (SSTA). In this paper, we propose a process and environment sensitivity based, SSTA algorithm for high speed CMOS technology combinational circuits. The algorithm calculates the propagation delay of the combinational circuits more correctly by considering all process parameters like length, width oxide thickness and dopant of the MOSFET and environment parameters like operating temperature and the supply voltage. To investigate the SSTA analyzer a combinational circuit application is used, namely four bit adder. The designed SSTA algorithm used more correct path based analysis instead of block base analysis. The accuracy of the model is verified using Monte Carlo analysis for 32 nm technology. The proposed SSTA method shows that the average errors 1.43% and 5.98% in mean and standard deviation, respectively compared with Monte Carlo analysis and need less simulation time than Monte Carlo analysis.
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References
Yelamarthi K, Chen C-I H (2009) Process variation-aware timing optimization for dynamic and mixed-static-dynamic CMOS logic. IEEE Trans Semicond Manuf 22(1):31–39
Jiang L, Wen S, Tai W, Lei W, Chang L, Cheng Y (2014) Device parameter variations of n-MOSFETS with dog-bone layouts in 65 nm and 40 nm technologies. IEEE. https://doi.org/10.1109/ASICON.2013.6812060
Tang Q, Zjajo A, Berkelaar M, van der Meijs N (2010) RDE-based transistor-level gate simulation for statistical static timing analysis. In: DAC’10, pp 787–792
Tang Q, Zjajo A, Berkelaar M, van der Meijs N (2014) Considering crosstalk effects in statistical timing analysis. IEEE Trans Comput Aided Des Integr Circ Syst 33(2):318–322
Kang K, Paul BC, Roy K (2005) Statistical timing analysis using levelized covariance propagation. IEEE Computer Society, pp 1–6
Saqib F, Ismari D, Lamech C, Plusquellic J (2014) Within-die delay variation measurement and power transient analysis using REBEL. IEEE Trans Very Large Scale Integr (VLSI) Syst, pp 1–5
Patil SR, Gautam DK (2015) Statistical drain current and input capacitance of MOSFET model for high speed CMOS circuits application. Springer, Berlin. https://doi.org/10.1007/s12633-015-9284-9
Morshed TH et al (2011) BSIM4v4.7 MOSFET mode -user’s manual 2011, UC Berkeley
Patil SR, Gautam DK (2016) Statistical modeling of logic gates and flip-flops for high speed CMOS circuits applications. Springer, Berlin. https://doi.org/10.1007/s12633-016-9453-5
Agarwal A, Blaauw D, Zolotov V, Sundareswaran S, Zhao M, Gala K, Panda R Path-based statistical timing analysis considering interand intra-die correlations. ACM 1-58113-526-2/02/0012, pp 1–6
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Patil, S.R., Gautam, D.K. Statistical Modeling of Combinational Circuits Using Path Based Delay Analysis. Silicon 10, 2063–2069 (2018). https://doi.org/10.1007/s12633-017-9721-z
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DOI: https://doi.org/10.1007/s12633-017-9721-z