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Efficient PL Emission from p-type Porous Silicon: A Comparative Study for Selection of Effective Anodization Parameters

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Abstract

The physical mechanism of highly efficient photoluminescence (PL) emission from p-type silicon is described by a comparative study of the effectiveness of the etching parameters in an electrochemical anodization technique. Two series of porous silicon samples were prepared in a combination of anodization current and time, to maintain the total amount of anodic charge transfer constant. Photoluminescence studies show that irrespective of the amount of charge transfer, the samples prepared with comparatively higher current density show an efficient PL as well as stronger blueshift in the emission energy vis-à-vis the samples prepared for longer durations. An overall decrease in crystallite size, as estimated by Raman spectral analysis, was observed for both series of samples with the progress of charge transfer. Comparative analysis shows a marginal difference in crystallite size for both series of samples in the initial state of charge transfer, whereas major differences arise at higher values. This is explained with the formation of silicon suboxide on the porous surface at higher current density, leading to initiation of side wall reaction, and higher reduction rate in crystallite size as well as strong luminescence due to the carrier quantum confinement effect.

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Acknowledgments

The author 1 gratefully acknowledges the financial support provided by Department of Science & Technology, Govt. of India, through its INSPIRE Grant No. IFA-12 ENG-13.

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Authors and Affiliations

  1. Nano-Sensor Research Laboratory, F/o Engineering and Technology, Jamia Millia Islamia (Central University), New Delhi, 110025, India

    Saakshi Dhanekar & S. S. Islam

  2. Centre for Applied Research in Electronics (CARE), Indian Institute of Technology (IIT), Hauz Khas, New Delhi, 110016, India

    Saakshi Dhanekar

  3. Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (Central University), New Delhi, 110025, India

    S. S. Islam

Authors
  1. Saakshi Dhanekar
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  2. S. S. Islam
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Correspondence to Saakshi Dhanekar.

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Dhanekar, S., Islam, S.S. Efficient PL Emission from p-type Porous Silicon: A Comparative Study for Selection of Effective Anodization Parameters. Silicon 10, 725–730 (2018). https://doi.org/10.1007/s12633-016-9522-9

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  • DOI: https://doi.org/10.1007/s12633-016-9522-9

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