Abstract
In this paper, the Au/n-ZnO/p-Si/Al heterojunction for developing solar cells with high conversion efficiency and low cost were studied. The Au/n-ZnO/p-Si/Al HIT (heterojunction with intrinsic thin-layer) solar cells were analyzed and designed by AFORS-HET software. The characteristics of such cells with emitter intrinsic layer thickness and interface states density are discussed. The simulation results show that the key role of the intrinsic layer inserted between the ZnO and crystalline silicon substrate p-Si is to decrease the interface states density. If the interface states density is lower than 1010 cm−2.V−1, a thinner intrinsic layer is better than a thicker one. The increase of the thickness of the emitter will decrease the short-current density and affect the conversion efficiency. The effect of Surface Recombination Velocity (SRV) front and back on the J-V characteristics of the Au/n-ZnO/p-Si/Al heterojunction solar cell has been studied with this simulation. With the optimized parameters set, the Au/n-ZnO/p-Si/Al solar cell reaches a high efficiency (η) up to 21.849 % (FF: 0.834, Voc: 0.666 V, Jsc: 39.39 mA/cm2).
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References
Zhoa J, Wang A, Green MA (1998) 19.8 % efficient honey-comb textured multicrystalline and 24.4 % monocrystalline silicon solar cells. Appl Phys Lett 73:1991
Hamakawa Y, Okamoto H, Nitta Y (1979) A new type of amorphous silicon photovoltaic cell generating more than 2.0 V. Appl Phys Lett 35:187–189
Reuter M, Brendle W, Tobail O, Wemer JH (2009) Fifty millimeter thin solar cells with 17.0 % efficiency. Sol Energy Mater Sol Cells 93:704–706
Muller J, Rech B, Springer J, Vanecek M (2004) TCO And light trapping in silicon thin film solar cells. Sol Energy 77:917–930
Zeng L, Bermel P, Yi Y, et al. (2008) Demonstration of enhanced absorption in thin film Si solar cells with textured photonic crystal back reflector. Appl Phys Lett 93:221105
Stangl R, Schaffarzik D, Laades A, Kliefoth K, Schmidt M, Fuhs MW (2004) Characterization of interfaces in amorphous/crystalline silicon heterojunction solar cellsby surface photovoltage spectroscopy. In: Proceedings of the 19th EU PVSEC, Paris, France, pp 686–689
Leendertz C, Mingirulli N, Schulze TF, Kleider JP, Rech B, Korte L (2011) Discerning passivation mechanisms at a-Si:H/c-Si interfaces by means of photoconductance measurements. Appl Phys Lett 98:202108–1/3
Schulze TF, Leendertz C, Mingirulli N, Korte L, Rech B (2011) Impact of Fermi-level dependent defect equilibration on Voc of amorphous/crystalline silicon heterojunction solar cells. Energy Procedia 8:282–287
Martın de Nicolas S, Munoz D, Ozanne AS, Nguyen N, Ribeyro PJ (2011) Optimisation of doped amorphous silicon layers applied to heterojunction solar cells. Energy Procedia 8:226–231
Bivour M, Meinhardt C, Pysch D, Reichel C, Ritzau K, Hermle M, Glunz SW (2010) N-type silicon solar cells with Amorphous/Crystalline Silicon Hetero-Junction rear emitter. In: Proceedings of the 35th IEEE photovoltaic specia- lists conference, Honolulu, Hawaii, USA, pp 1304–1308
Axelevitch A, Palankovski V, Selberherr S, Golan G (2014) Investigation of Novel Silicon PV Cells of a Lateral Type, silicon, 20 Aug
Wunsch F, Citarella G, Abdallah O, Kunst M (2006) An inverted a-Si:H/c-Si heterojunction for solar energy conversion. J Non-Cryst Solids 352:1962–1966
Gray JL (1991) Conference record of the 22nd IEEE photovoltaic specialists conference, Las Vegas, NV, pp 436–438
Smole F, Topic M, Furlan J (1994) Sol Energy Mater Sol Cells 34:385
Froitzheim A, Stangl R, Elstner L, Kriege M, Fuhs W (2003) Presented at the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 11–18 May, pp 272–279
Michael S, Michalopoulos P (2002) Proceedings of the 45th Midwest Symposium on Circuits and Systems Conference, vol 2, p II-651-4
Brown GF, Ager JW, Walukiewicz W, Wu J (2010) Sol Energy Mater Sol Cells 94:478–483
Ren BY, Wang MH, Liu XP, Li YL (2008) Acta Energy Solaris Sinica 29(2):126–129
Oueriagli A, Kassi H, Hotchandani S, Leblanc RM (1992) J Appl Phys 71:5523
Sze MS (1981) Physics of semiconductor devices, 2nd edn. Wiley, New York
Rhoderick EH (1978) Metal semiconductor contacts. Oxford University Press, Oxford
Van CN, Kamloth KP (2001) Thin Solid Films 392:113
El-Nahass MM, Zeyada HM, Aziz MS, El-Ghamaz NA (2005) Solid-State Electron 49:1314
Forrest SR, Kaplan ML, Schmidt PH (1984) J Appl Phys 56:543
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El-Amin, A.A. High Efficiency Computer Simulation for Au/n-ZnO/p-Si/Al Schottky-Type Thin Film Heterojunctions. Silicon 9, 385–393 (2017). https://doi.org/10.1007/s12633-016-9430-z
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DOI: https://doi.org/10.1007/s12633-016-9430-z