Additive-aided electrochemical deposition of bismuth telluride in a basic electrolyte

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Abstract

A new basic electrolyte with two cationic plating additives, polydiaminourea and polyaminosulfone, was investigated for the electrochemical deposition of the bismuth telluride film on a nickel-plated copper foil. Tellurium starts to deposit at a higher potential (−0.35 V) than bismuth (−0.5 V) in this electrolyte. The tellurium-to-bismuth ratio increases while the deposition potential declines from −1 to −1.25 V, indicating a kinetically quicker bismuth deposition at higher potentials. The as-deposited film features good adhesion to the substrate and smooth morphology, and has a nearly amorphous crystal structure disclosed by X-ray diffraction patterns.

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Correspondence to Xin-bing Zhao.

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This work was financially supported by the National Natural Science Foundation of China (No.50731006).

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Qiu, W., Zhang, S., Zhu, T. et al. Additive-aided electrochemical deposition of bismuth telluride in a basic electrolyte. Int J Miner Metall Mater 17, 489–493 (2010). https://doi.org/10.1007/s12613-010-0346-0

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Keywords

  • thin films
  • thermoelectric materials
  • electrochemical deposition
  • bismuth telluride
  • basic electrolyte