Abstract
AlN films were deposited by reactive radio frequency (RF) sputtering on various bottom electrodes, such as Al, Ti, Mo, Au/Ti, and Pt/Ti. The effects of substrate metals on the orientation of AlN thin films were investigated. The results of X-ray diffraction, atomic force microscopy, and field emission scanning electron microscopy show that the orientation of AlN films depends on the kinds of substrate metals evidently. The differences of AlN films deposited on various metal electrodes are attributed to the differences in lattice mismatch and thermal expansion coefficient between the AlN material and substrate metals. The AlN film deposited on the Pt/Ti electrode reveals highly the c-axis orientation with well-textured columnar structure. The positive role of the Pt/Ti electrode in achieving the high-quality AlN films and high-performance film bulk acoustic resonator (FBAR) may be attributed to the smaller lattice mismatch as well as the similarity of thermal expansion coefficient between the deposited AlN material and the Pt/Ti electrode substrate.
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This work was financially supported by the National Natural Science Foundation of China (No.50872031) and the Natural Science Foundation of Hubei Province, China (No.2008CDA018).
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Xiong, J., Gu, Hs., Hu, K. et al. Influence of substrate metals on the crystal growth of AlN films. Int J Miner Metall Mater 17, 98–103 (2010). https://doi.org/10.1007/s12613-010-0117-y
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DOI: https://doi.org/10.1007/s12613-010-0117-y