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Dielectric and energy storage properties of PbO–SrO–Nb2O5–Na2O–Si thin films by annealing

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Abstract

Dielectric and energy storage properties of PbO–SrO–Na2O–Nb2O5–SiO2 (PSNNS) thin films with annealing temperature from 700 to 850 °C were investigated by measuring their capacitance-electric filed curve and hysteresis loops. The results show that the highest dielectric constant and energy density are 81.2 and 17.0 J·cm−3, respectively, which is obtained in the sample with annealing temperature of 800 °C. Annealed from 700 to 800 °C, the dielectric constant and energy storage performance of PSNNS films are continuously improved. However, with annealing temperature up to 850 °C, their dielectric constant decreases, which might be related with the removal of interfacial defects as a function of annealing temperature. Defect is one of the causes of space charge phenomenon, resulting in the increase in dielectric constant. Moreover, the microstructure analysis by X-ray diffraction (XRD) and transmission electron microscope (TEM) indicates that the change of crystallization phase and interfacial polarization takes responsibility to the results.

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Acknowledgements

This study was financially supported by the National Natural Science Foundation of China (No. 51477012) and Beijing Nova Program (No. xx2016046).

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Authors and Affiliations

  1. State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing, 100088, China

    Fei-Hu Tan, Feng Wei, Hong-Bin Zhao, Xiao Zhang & Jun Du

  2. Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing, 100088, China

    Qing-Meng Zhang

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  1. Fei-Hu Tan
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  2. Qing-Meng Zhang
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  3. Feng Wei
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  4. Hong-Bin Zhao
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Correspondence to Jun Du.

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Tan, FH., Zhang, QM., Wei, F. et al. Dielectric and energy storage properties of PbO–SrO–Nb2O5–Na2O–Si thin films by annealing. Rare Met. 43, 351–355 (2024). https://doi.org/10.1007/s12598-018-1134-7

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  • DOI: https://doi.org/10.1007/s12598-018-1134-7

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