Abstract
SiC nanowires were fabricated on the silicon substrate dipped with a layer of Ni catalyst at 900 °C by gas pressure annealing processing. The morphologies and crystal structures were determined by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The results show that the as-synthesized nanowires are β-SiC single crystalline with diameter range of 50–100 nm, and length of tens of micron by directly annealing at 900 °C. The SiC nanowires grow along the [111] direction with highly uniform morphology. And the possible growth mechanism of SiC nanowires is proposed. The present work provides an efficient strategy for the production of high-quality SiC nanowires.
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Acknowledgments
This work was financially supported by the National High Technology Research and Development Program (No. 2007AA03Z340), the National Natural Science Foundation of China (Nos. 51202045, 51021002, 51172050, 51102063, 51372052 and 50672018), the Fundamental Research Funds for the Central Universities (No. HIT. NSRIF. 2013004) and the Key Technology Research and Development Program of Heilongjiang Province (No. GC12C305-3).
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Xie, WL., Zhang, XD., Liu, WH. et al. Low-temperature synthesis of SiC nanowires with Ni catalyst. Rare Met. 38, 206–209 (2019). https://doi.org/10.1007/s12598-015-0459-8
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DOI: https://doi.org/10.1007/s12598-015-0459-8