Abstract
Copper indium(1-x) Gallium(x) Diselenide (CIGS) layer for (x = 0.3) was optimized for low cost developing 50 × 50 mm CIGS solar cell module. For depositing the CIGS thin-film layer by RF-sputtering technique, single quaternary chalcopyrite CIGS sputter target was fabricated by High energy Ball Milling followed by a cold press vacuum sintering process. CIGS thin-film layer has been deposited at 10, 15, and 20 mTorr deposition pressure and 125, 150, and 175 W RF-Power. The effect of Rapid thermal annealing was studied under different annealing profiles. It was found that CIGS thin-film layer deposited at 15 mTorr, 150 W, and annealing for 250 °C results in a smooth surface however the grain size is very small. Further, the Rapid Thermal Annealing (RTA) process of CIGS film-annealed under a two-step annealing process [400 °C (2 min) + 550 °C (8 min)] possesses the sharp and intense X-ray peak. Physical, optical, elemental, and microstructural topographical analyses of CIGS thin film were analyzed. Optimized CIGS thin film was used as an absorber functional layer in the fabrication CIGS solar cell module. The cell draws 2.23% and the module 3.17% conversion efficiency. Grazing Incidence X-ray Diffraction (GIXRD), Secondary-ion mass spectrometry (SIMS) Field emission scanning electron microscopy (FESEM), and Current–Voltage (I–V) characteristics of the device were investigated for in-depth phase formation, elemental distribution, microstructural, and performance analysis.
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Acknowledgements
The authors would like to thank the Department of Science and Technology (DST) for financial support under the SERI research Project No. DST/TMD/SERI/D 16(G) dated 12/05/2017.
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Suryavanshi, P.S., Panchal, C.J. Low-cost fabrication of single chalcogenide CuInGaSe2 sputter target and its thin films for solar cell applications. J Opt 53, 828–846 (2024). https://doi.org/10.1007/s12596-023-01324-5
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DOI: https://doi.org/10.1007/s12596-023-01324-5