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Analysis of electrical, optical, and structural behaviour of nanostructured CdS thin films for photosensing devices

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Abstract

CdS thin films were prepared sol–gel spin coating methodology. The prepared CdS thin films were annealed, and various characterizations were performed to study their optical, structural, and electrical properties. The fabrication of a photonic device depends upon its optical properties and structural parameters. In this work, optical band gap of CdS thin films is found to be in the range of 2.41–2.45 eV, which is comparable to the optical band gap of bulk CdS. The stable wurtzite phase corresponds to (100), (002), and (110) planes. The formation of CdO was also observed at a higher temperature (500 °C). First- and second-order optical phonon modes could be observed for annealed CdS thin films through Raman spectroscopy. The linear behaviour of current was observed to applied voltage, and photo-response with time was also noticed.

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  1. Department of Physics, Lovely Professional University, Phagwara, Punjab, 144411, India

    Rekha Aggarwal & Rajesh Kumar

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Aggarwal, R., Kumar, R. Analysis of electrical, optical, and structural behaviour of nanostructured CdS thin films for photosensing devices. J Opt 52, 1676–1682 (2023). https://doi.org/10.1007/s12596-022-00996-9

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