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Electrical performance analysis of Al0.5Ga0.5 N/AlN/Sapphire-based MSM UV detector for high photocurrent

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Abstract

Present work analyzes the performance of Al0.5Ga0.5 N/AlN/Sapphire-based MSM (Metal–Semiconductor–Metal) detector for high photocurrent by selecting slightly higher S/(S + W) ratio. As per previous reports, metal electrodes width (W) and spacing between electrodes (S) dimensions of MSM detectors affect number of electrodes. Moreover, photocurrent of MSM detector can be improved by increasing the number of electrodes or fingers. However, for same detector area, the number of fingers gets reduced if S/(S + W) ratio increases. Therefore, there is a need to investigate MSM detector with suitable electrode dimensions to enhance photocurrent but at reasonably lower dark current density. Main motive of present work is to analyze electrical performance of Al0.5Ga0.5 N/AlN/Sapphire MSM detector with 20 electrodes based on double-spacing dimensions. Investigation analysis of detector has been performed using Silvaco-Atlas simulation tool by generating I–V characteristics and cut-line plots. In addition, sufficient electrical as well as optical properties of semiconductor materials and carrier statistics models have been utilized. Obtained results have been compared with the experimental results of same Al0.5Ga0.5 N/AlN/Sapphire MSM structure based on same electrode pairs and same thickness of AlGaN and AlN layers. In present work, photocurrent of magnitude around 30 mA has been obtained at 20 V using incident light of wavelength 270 nm and 1 W/cm2 intensity. Dark current density of 5e−08 A/cm2 at 20 V is observed. Therefore, obtained results can be useful for high responsivity, large signal/noise ratio-based applications requiring efficient UV sensors.

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Authors and Affiliations

  1. Chitkara University School of Engineering and Technology, Chitkara University, Pinjore-Barotiwala National Highway, Solan, Himachal Pradesh, 174 103, India

    Harpreet Kaur & Minaxi Dassi

  2. Chitkara University Institute of Engineering and Technology, Chitkara University, Chandigarh-Patiala National Highway, Rajpura, Punjab, 140 401, India

    Harsimran Jit Kaur

  3. Semi-Conductor Laboratory, Sector-72, S.A.S Nagar, Mohali, 160 071, India

    Manish Kumar Hooda

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  1. Harpreet Kaur
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Dr. MKH and Dr. HJK guided for concepts, proofread and helped in implementation. HK wrote the paper and implemented the concept. Dr. MD helped in manuscript writing.

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Correspondence to Harpreet Kaur.

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Kaur, H., Kaur, H.J., Hooda, M.K. et al. Electrical performance analysis of Al0.5Ga0.5 N/AlN/Sapphire-based MSM UV detector for high photocurrent. J Opt 52, 355–364 (2023). https://doi.org/10.1007/s12596-022-00904-1

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