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Passively mode-locked Tm, Ho:LLF laser at 1895 nm

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Abstract

A passively continuous-wave mode-locked Tm, Ho:LiLuF4 laser employing a GaAs-based semiconductor saturable absorber mirror is demonstrated for the first time. Pumped by a CW Ti:sapphire laser at 780 nm, the laser-absorbed-pump-power threshold is as low as 108 mW. When the absorbed pump power is increased to 910 mW, the laser operation is evolved to the Q-switched mode-locking from the Q-switching. Further improving the absorbed pump power to 1.86 W, the continuous stable mode-locking operation is obtained. Typical pulses of 4.7 ps at 1895 nm with an average output power of 257 mW and repetition rate of 98.04 MHz were obtained under the absorbed pump power of 2.7 W.

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Acknowledgements

This work was supported by the National Science Foundation of China (Grant Nos. 11774257, 61564008, 61465012, 61461046, 61665010, 61661046), the National Key Research and Development Program (2017YFB045200) and Tianshui science and technology support program project (Grant No. 2018-FZJHK-2704).

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Authors and Affiliations

  1. Institute of Laser Technology, Tianshui Normal University, Tianshui, 741001, People’s Republic of China

    Weijun Ling, Tao Xia, Zhong Dong, Liangfang You, Mingxia Zhang, Yinyan Zuo, Ke Li, Qin Liu & Feiping Lu

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  1. Weijun Ling
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  2. Tao Xia
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  3. Zhong Dong
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  7. Ke Li
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  9. Feiping Lu
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Correspondence to Weijun Ling or Zhong Dong.

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Ling, W., Xia, T., Dong, Z. et al. Passively mode-locked Tm, Ho:LLF laser at 1895 nm. J Opt 48, 209–213 (2019). https://doi.org/10.1007/s12596-019-00528-y

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