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Novel fringing field model for MEMS resonators

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Abstract

Electrostatically-driven microelectromechanical systems (MEMS) devices are mathematically modelled using one dimensional approximation to study the nonlinear dynamics of the resonators. It is observed that the electrostatic fringing field affects the pull dynamics of MEMS resonators. The existing fringing field models are developed under assumption of infinitely wide rigid grounded beam as compared to the deformable beam. These models considered parameters which depends upon the thickness and the width of the elastic beam. In general, the MEMS resonators which are used for practical applications cannot have infinitely wide rigid grounded beam. In this work, a new fringing field model is developed to take into the account the finite width of the rigid beam electrode. A new parameter \(\gamma \) which accounts the fringing field effect due to the finite width of deformable and grounded rigid beam electrodes is introduced. The performance of the new fringing field model is compared with the existing fringing models for different cases. It is observed that the new fringing field model performance better for all test cases.

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Author notes

  1. Rahul Kumar and Dileesh Parayil are contributed equally to this work.

Authors and Affiliations

  1. Mechanical, Materials and Aerospace Engineering, Indian Institute of Technology Dharwad, Dharwad, Karnataka, 580011, India

    Rahul Kumar & Amar K. Gaonkar

  2. Mechanical Engineering, Indian Institute of Technology Bombay, Mumbai, Maharashtra, 400076, India

    Dileesh Parayil

Authors
  1. Rahul Kumar
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  2. Dileesh Parayil
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  3. Amar K. Gaonkar
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Correspondence to Amar K. Gaonkar.

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Kumar, R., Parayil, D. & Gaonkar, A.K. Novel fringing field model for MEMS resonators. Int J Adv Eng Sci Appl Math (2023). https://doi.org/10.1007/s12572-023-00357-0

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  • DOI: https://doi.org/10.1007/s12572-023-00357-0

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