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Selection of 8-channel silicon phototransistor arrays for space applications, based on wafer-level radiation and high-temperature storage tests

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Abstract

One of the aspects that semiconductor devices have to cope with in space applications is radiation induced damage. Therefore, radiation hardness studies are crucial for the space missions and a comprehensive on-ground testing of the components needs to be performed aiming at identifying the most radiation tolerant technologies. This paper reports the test results on newly designed and fabricated 8-channel silicon phototransistors arrays, their performance against various layouts designs, and process implementations, and discusses the achieved reliability after exposure to gamma rays, protons radiations, and high-temperature storage at wafer level in the framework of Optoi’s aerospace activities. This work was funded by the European Space Agency. The results also represent a complementary analysis aimed at better understanding and interpreting the outcomes of the non-packaged devices. In conclusion, the best combination of design parameters proving the most robust with respect to the others could be selected, being considered satisfactory and acceptable for the next phase of component assessment.

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Acknowledgements

This work has been supervised by European Space Agency. The Technical Officer appointed for this activity is Dr Charlotte Bringer of ESA. Furthermore, the kind supports of Dr Christian Poivey (from ESA), Prof. Antonino LaMagna (from CNR-IMM), Prof. Vincenzo Bellini (from INFN-Catania), and Prof. David Mascali (from INFN-LNS) are acknowledged.

Funding

The research leading to these results received funds from the GSTP funding scheme (General Support Technology Programme) of the European Space Agency through the national support of Italy. The Contractor is Optoi (ESTEC Contract No: 4000127011/19/NL/FE/hh).

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Authors and Affiliations

  1. OPTOI, Trento, Italy

    Aref Eshkevar Vakili, Matteo Bregoli, Silvia Ceriani & Daniel Bassetti

  2. National Institute for Nuclear Physics (INFN), Catania, Italy

    Aref Eshkevar Vakili

  3. European Organization for Nuclear Research (CERN), Geneva, Switzerland

    Aref Eshkevar Vakili

  4. FBK, Trento, Italy

    Francesco Ficorella

  5. DII, University of Trento, Trento, Italy

    Lucio Pancheri

  6. European Space Agency, Noordwijk, The Netherlands

    Charlotte Bringer

Authors
  1. Aref Eshkevar Vakili
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  2. Matteo Bregoli
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  3. Silvia Ceriani
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  4. Daniel Bassetti
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  5. Francesco Ficorella
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  6. Lucio Pancheri
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  7. Charlotte Bringer
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Contributions

All authors contributed to the study conception and design. Material preparation, data collection, and analysis were performed by FF, SC, DB, MB, AEV, and CB. The interpretation of results was performed by FF, LP, MB, CB, SC, and AEV.

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Correspondence to Matteo Bregoli.

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Eshkevar Vakili, A., Bregoli, M., Ceriani, S. et al. Selection of 8-channel silicon phototransistor arrays for space applications, based on wafer-level radiation and high-temperature storage tests. CEAS Space J 14, 263–285 (2022). https://doi.org/10.1007/s12567-022-00443-2

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